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MOSFETs from Manufacturers in Germany - Page 81

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 81 of 89
IPBE65R190CFD7A Image
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Infineon Technologies - IPBE65R190CFD7A

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 to 14 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.159 to 0.355 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
77 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO263-7-11
Applications:
UnidirectionalandbidirectionalDC-Dcconverters, On-...
more info
IPW65R048CFDA Image
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Infineon Technologies - IPW65R048CFDA

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 to 63.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.043 to 0.112 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
500 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO247
Applications:
Automotive
more info
IPB80R290C3A Image
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Infineon Technologies - IPB80R290C3A

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 17 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.28 to 0.67 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
227 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
IPB80P03P4-05 Image
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Infineon Technologies - IPB80P03P4-05

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-80 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
3.8 to 5 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
137 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
AUIRF7304Q Image
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Infineon Technologies - AUIRF7304Q

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.7 to -3.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
0.090 to 0.140 Mohms
Gate Source Voltage:
12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Automotive
more info
IPB80P03P4L-04 Image
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Infineon Technologies - IPB80P03P4L-04

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-80 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
3.4 to 7 Mohms
Gate Source Voltage:
16 V
Power Dissipation:
137 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
AUIRF7316Q Image
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Infineon Technologies - AUIRF7316Q

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.9 to -3.9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
0.042 to 0.098 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
1.3 to 2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Automotive
more info
IPP65R190CFDA Image
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Infineon Technologies - IPP65R190CFDA

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 17.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.171 to 0.445 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
151 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO-220
Applications:
Automotive
more info
IPDQ60R010S7A Image
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Infineon Technologies - IPDQ60R010S7A

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.009 to 0.022 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
694 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-HDSOP-22
Applications:
Circuitbreakers(HVBatterydisconnectswitch, DCandAC...
more info
AUIRFR6215 Image
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Infineon Technologies - AUIRFR6215

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13 to -9 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
0.295 to 0.580 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 175 Degree C
Package:
D-Pak
Applications:
Automotive
more info
IPW80R290C3A Image
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Infineon Technologies - IPW80R290C3A

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 17 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.25 to 0.67 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
227 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO247-3
Applications:
Automotive
more info
IPB65R110CFDA Image
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Infineon Technologies - IPB65R110CFDA

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19.7 to 31.2 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.099 to 0.11 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
277.8 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO263
Applications:
Automotive
more info
AUIRFR5305 Image
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Infineon Technologies - AUIRFR5305

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-31 to -22 A
Drain Source Breakdown Voltage:
-55 V
Drain Source Resistance:
0.065 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 175 Degree C
Package:
D-Pak
Applications:
Automotive
more info
AUIRF7342Q Image
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Infineon Technologies - AUIRF7342Q

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 to -2.7 A
Drain Source Breakdown Voltage:
-55 V
Drain Source Resistance:
0.095 to 0.170 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
1.3 to 2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Automotive
more info
IPD65R660CFDA Image
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Infineon Technologies - IPD65R660CFDA

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.8 to 6 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.594 to 1.54 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
62.5 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO 252
Applications:
Automotive
more info
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