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MOSFETs from Manufacturers in Netherlands

945 MOSFETs from 1 manufacturer meet your specification.
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PSMN1R9-80SSJ Image
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Nexperia - PSMN1R9-80SSJ

MOSFET from Nexperia
N-Channel ASFET for High-Power Motor Control

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
239 to 286 A
Drain Source Breakdown Voltage:
72 to 80 V
Drain Source Resistance:
1.6 to 4.4 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK88
Industry:
Industrial, Commercial
Applications:
Applications using MOSFETs in parallel, Applicatio...
more info
PSMN2R3-100SSJ Image
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Nexperia - PSMN2R3-100SSJ

MOSFET from Nexperia
N-Channel ASFET with Dynamic Current Sharing

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
217 to 255 A
Drain Source Breakdown Voltage:
90 to 100 V
Drain Source Resistance:
1.85 to 5.2 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK88
Industry:
Industrial, Commercial
Applications:
Applications using MOSFETs in parallel, Applicatio...
more info
BUK7A1R0-100L Image
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Nexperia - BUK7A1R0-100L

MOSFET from Nexperia
100 V Automotive-Qualified N-channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
460 A
Drain Source Breakdown Voltage:
90 to 100 V
Drain Source Resistance:
0.9 to 2.3 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
1550 W
Temperature operating range:
-55 to 175 Degree C
Package:
CCPAK1212
Industry:
Automotive, Industrial, Commercial
Applications:
Light-electric / Electric vehicle applications, 48...
more info
BUK6Q21-30P Image
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Nexperia - BUK6Q21-30P

MOSFET from Nexperia
-30 V Automotive Qualified N-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-41 to -29 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
14 to 39 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
56 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Reverse polarity protection, High-speed line drive...
more info
BUK9R4R5-40H Image
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Nexperia - BUK9R4R5-40H

MOSFET from Nexperia
40 V Automotive-Grade N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
91 A
Drain Source Breakdown Voltage:
36 to 43 V
Drain Source Resistance:
3.6 to 11.3 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
71 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT8038-2
Industry:
Industrial, Commercial, Automotive
Applications:
Motor drive, Battery protection, DC-DC conversion
more info
BUK6Q12-40P Image
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Nexperia - BUK6Q12-40P

MOSFET from Nexperia
-40 V, -45 to -64 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-45 to -64 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
9.9 to 24.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
94 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT8002-3
Industry:
Industrial, Commercial, Automotive
Applications:
Reverse polarity protection, High-speed line drive...
more info
NSF060120D7A0-Q Image
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Nexperia - NSF060120D7A0-Q

MOSFET from Nexperia
1200 V, 27 to 38 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 to 38 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 to 110 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
183 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial, Electric Vehicle
Applications:
Onboard charger, DC-DC converter, Auxiliary drives
more info
NSF030120D7A0-Q Image
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Nexperia - NSF030120D7A0-Q

MOSFET from Nexperia
1200 V Automotive-Grade SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49 to 69 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
30 to 53 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
306 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial, Electric Vehicle
Applications:
Onboard charger, DC-DC converter, Auxiliary drives
more info
NSF040120D7A1-Q Image
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Nexperia - NSF040120D7A1-Q

MOSFET from Nexperia
Automotive-Qualified N-Channel SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 to 54 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 70 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial, Electric Vehicle
Applications:
Onboard charger, DC-DC converter, Auxiliary drives
more info
NSF040120T2A1 Image
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Nexperia - NSF040120T2A1

MOSFET from Nexperia
1200 V N-Channel SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 to 55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 70 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
254 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT8107-2
Industry:
Industrial, Commercial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
NSF030120T2A0 Image
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Nexperia - NSF030120T2A0

MOSFET from Nexperia
1200 V N-Channel SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
30 to 53 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
294 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT8107-2
Industry:
Industrial, Commercial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
NSF060120T2A0 Image
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Nexperia - NSF060120T2A0

MOSFET from Nexperia
1200 V N-Channel SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 to 36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 to 110 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
167 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT8107-2
Industry:
Industrial, Commercial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
PSMN1R0-100CSF Image
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Nexperia - PSMN1R0-100CSF

MOSFET from Nexperia
100 V N-Channel MOSFET for OR-ing Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
460 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.65 to 2.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1550 W
Temperature operating range:
-55 to 175 Degree C
Package:
CCPAK1212i (SOT8005A)
Industry:
Industrial, Commercial
Applications:
Battery protection, High power full and half-bridg...
more info
PSMN1R0-100ASF Image
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Nexperia - PSMN1R0-100ASF

MOSFET from Nexperia
100 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
460 A
Drain Source Breakdown Voltage:
90 to 100 V
Drain Source Resistance:
0.99 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.55 kW
Temperature operating range:
-55 to 175 Degree C
Package:
CCPAK1212 (SOT8000A)
Industry:
Commercial, Industrial
Applications:
Battery protection, High power full and half-bridg...
more info
PSMN1R3-80SSF Image
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Nexperia - PSMN1R3-80SSF

MOSFET from Nexperia
80 V N-Channel Enhancement Mode MOSFET for Motor Control Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
335 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
341 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Commercial, Industrial
Applications:
Synchronous rectifier in AC-DC and DC-DC, Primary ...
more info
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