MOSFETs from Manufacturers in Switzerland - Page 36

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- 25 to 25 V, 44 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.94 to 110 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 8x8 HV
Applications:
Switching applications
more info
- 25 to 25 V, 35 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
150 to 180 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP ultra narrow leads
Applications:
Switching applications
more info
-30 to 30 V, 60 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
160 to 185 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 8x8 HV
Applications:
Switching applications
more info
- 20 to 20 V, 9.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.44 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
10400 to 15000 Milliohm
Gate Source Voltage:
- 20 to 20 V
Power Dissipation:
3.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Applications:
Switching applications
more info
- 25 to 25 V, 55 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
70 to 80 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
H2PAK-2
Applications:
Switching applications
more info
- 25 to 25 V, 17 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
475 to 530 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 5x5 HV
Applications:
Switching applications
more info
- 25 to 25 V, 82 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
67 to 78 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3PF
Applications:
Switching applications
more info
- 25 to 25 V, 16.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
255 to 308 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 5x6 HV
Applications:
Switching applications, LLC converters, Boost PFC ...
more info
- 25 to 25 V, 36 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
180 to 210 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 8x8 HV
Applications:
Switching applications
more info
- 25 to 25 V, 33.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
105 to 125 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
I2PAK
Applications:
Switching applications, LLC converters, Boost PFC ...
more info
- 25 to 25 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
560 to 600 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
- 25 to 25 V, 14 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
730 to 790 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
- 25 to 25 V, 62 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22.5 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
66 to 90 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 8x8 HV
Applications:
Switching applications
more info
- 25 to 25 V, 35 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
125 to 140 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 8x8 HV
Applications:
Switching applications
more info
- 25 to 25 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
280 to 360 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
I2PAK
Applications:
Switching applications
more info

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