MOSFETs from Manufacturers in Switzerland

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40 V Automotive Grade N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 to 420 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.45 to 0.85 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
187 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerFLAT
Industry:
Automotive, Industrial, Commercial
Applications:
Power distribution
more info
40 V N-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
290 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.1 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
167 W
more info
600 V Automotive Qualified N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
99 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
H²PAK-2
Industry:
Automotive
Applications:
High efficiency switching applications
more info
100 V N-Channel Enhancement MOSFET for Industrial Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Industry:
Industrial
more info
Automotive-Grade N-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
32 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
89 milli-ohm
Gate Source Voltage:
25 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
ACEPACK SMIT
Industry:
Automotive
Applications:
Switching applications
more info
Automotive Qualified N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
35 milli-ohm
Gate Source Voltage:
25 V
Power Dissipation:
379 W
Temperature operating range:
-55 to 150 Degree C
Package:
ACEPACK SMIT
Industry:
Automotive
Applications:
Switching applications
more info
1200 V Automotive Qualified MOSFET Power Module

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
488 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.60 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
869 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
SiC Power MOSFET for Electric Traction Inverters

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
275 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.05 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
549 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
1200 V SiC MOSFET for Electric Vehicle Traction Inverters

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
379 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.45 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
704 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
N Channel Enhancement Mode MOSFET for Switching Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
45 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
245 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial
Applications:
High efficiency switching applications
more info
600 V N-Channel Silicon Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
38 to 43 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
245 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial
Applications:
Llc resonant converter, Power supplies and convert...
more info
100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
300 milliohm
Gate Source Voltage:
-18 to 18 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257
Industry:
Space, Military
more info
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
63 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
76 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
Industry:
Space, Military
more info
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
Industry:
Space, Military
more info

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