MOSFETs from Manufacturers in Switzerland - Page 52

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Page 52 of 77
- 25 to 25 V, 45.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
108 to 125 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications, LLC converters, resonant c...
more info
- 25 to 25 V, 11.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
320 to 360 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
- 25 to 25 V, 16 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
299 to 350 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
- 25 to 25 V, 33.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
105 to 125 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications, LLC converters, Boost PFC ...
more info
-30 to 30 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
325 to 380 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
- 25 to 25 V, 31 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
198 to 220 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
- 25 to 25 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
135 to 158 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
150 W
Temperature operating range:
150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
- 25 to 25 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
285 to 320 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 12 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
4000 to 4500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
- 25 to 25 V, 64 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
125 to 139 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
7300 to 8500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Low power battery chargers, Swith mode low power s...
more info
- 25 to 25 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
400 to 470 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
70 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
- 25 to 25 V, 55 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
76 to 87 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 13 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
336 to 380 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 11 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
2700 to 3400 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info

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