MOSFETs from Manufacturers in Switzerland - Page 76

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Page 76 of 77
-20 to 20 V, 30 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
46 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.6 to 5.6 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-20 to 20 V, 29 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.1 to 2.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
111 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerFLAT 5x6 WF
Applications:
Switching applications
more info
-20 to 20 V, 180 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
180 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
2.1 to 2.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
315 W
Temperature operating range:
-55 to 175 Degree C
Package:
H2PAK-2
Applications:
Switching applications
more info
22 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.5 to 80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4.5 to 7.5 milliohm
Gate Source Voltage:
22 V
Power Dissipation:
4.8 to 72 W
Temperature operating range:
-55 to 175 Degree C
Package:
Power Flat
Applications:
Switching application
more info
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.0035 to 0.0055 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
300 W
Temperature operating range:
-60 to 175 Degree C
Package:
D2PAK
Applications:
Switching application
more info
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
180 A
Drain Source Breakdown Voltage:
24 V
Drain Source Resistance:
0.95 to 1.50 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
H2PAK-6
Applications:
Switching application
more info
22 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 56 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.6 to 11.2 milliohm
Gate Source Voltage:
22 V
Power Dissipation:
4 to 62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
Power Flat
Applications:
Switching application
more info
16 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
38 to 60 milliohm
Gate Source Voltage:
16 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Applications:
Switching application
more info
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.1 to 80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4 to 7.6 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
4 to 60 W
Temperature operating range:
-55 to 150 Degree C
Package:
Power Flat
Applications:
Switching application
more info
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.75 to 13 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.021 to 0.040 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
2.4 to 7.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
Power Flat
Applications:
Switching application
more info
22 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.2 to 78.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.9 to 7.9 milliohm
Gate Source Voltage:
22 V
Power Dissipation:
4.7 to 72 W
Temperature operating range:
-55 to 175 Degree C
Package:
Power Flat
Applications:
Switching application
more info
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
23 to 43 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 175 Degree C
Package:
Power Flat
Applications:
Switching application
more info
22 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.016 to 0.025 milliohm
Gate Source Voltage:
22 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 175 Degree C
Package:
Power Flat
Applications:
Switching application
more info
22 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.5 to 64 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.0076 to 0.0112 milliohm
Gate Source Voltage:
22 V
Power Dissipation:
4.8 to 62.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
Power Flat
Applications:
Switching application
more info
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.0032 to 0.0036 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2PAK
Applications:
Switching application
more info

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