MOSFETs from Manufacturers in United States - Page 15

9,086 MOSFETs from 25 manufacturers meet your specification.
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9,086 MOSFETs from 25 Manufacturers
9,086 Products from 25 Manufacturers
Page 15 of 606
90 to 125 V, 0.86 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.86 A
Drain Source Breakdown Voltage:
90 to 125 V
Drain Source Resistance:
3.6 to 7.5 Ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Industrial, Commercial
Applications:
Used in control and sensing applications
more info
-25 V, 30 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
30 mA
Drain Source Breakdown Voltage:
-25 V
Drain Source Resistance:
600 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
300 mW
Temperature operating range:
-55 to 150 Degree C
Package:
TO-72
Industry:
Industrial, Commercial
more info
950 V, 3.2 to 5 A, 31 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.2 to 5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
920 to 2820 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
EV charger, Solar, UPS, Server power
more info
1200 V, 18 to 29 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 29 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 175 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
56 to 139 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247AD 3L
Industry:
Industrial, Commercial
Applications:
Charger, Auxiliary motor drive, DC/DC converter
more info
-20 to 20 V, 10.4 nC, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
47 to 66 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.1 to 4.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Motor Drive, Battery Protection, Oring
more info
280 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
280 V
Drain Source Resistance:
380 to 500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
52.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
200 V N-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
480 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
1.99 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
1070 W
Temperature operating range:
-55 to 175 Degree C
Package:
SMPD
Industry:
Industrial, Commercial
Applications:
DC load switch, Battery energy storage systems, In...
more info
-20 to 20 V, 6.8 to 13.7 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
45 to 65 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
more info
1200 V, 250 A, Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
250 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
6.2 to 14.9 milli-ohm
Gate Source Voltage:
-4 to 15 V
Temperature operating range:
-40 to 175 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Traction Inverters
more info
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
29 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
240 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
460 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial, Military
more info
1200 V Automotive-Grade SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 to 56 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
33 to 66 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
202 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial, Commercial
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
1200 V, 19 to 36 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
64 to 105 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
182 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Industrial, Commercial
Applications:
Solar Inverters, EV/HEV Charging, Motor Drives, Hi...
more info
1200 V, 19 to 36 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 106 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
182 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
750 V, N-Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20.6 to 28 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
58 to 147 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
155 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive, Industrial, Commercial
Applications:
EV charging, PV inverters, Switch mode power suppl...
more info
30 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 10 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
20 to 45 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
16 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN
Industry:
Industrial, Commercial
more info

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