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MOSFETs from Manufacturers in United States - Page 24

9,086 MOSFETs from 25 manufacturers meet your specification.
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9,086 MOSFETs from 25 Manufacturers
9,086 Products from 25 Manufacturers
Page 24 of 606
iS20M5R5S1H Image
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iDEAL Semiconductor Devices - iS20M5R5S1H

MOSFET from iDEAL Semiconductor Devices
200 V, 108 to 152 A, 300 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
108 to 152 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
4.7 to 5.5 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2PAK-7L
Industry:
Industrial, Commercial
Applications:
Motor control, Boost converters and SMPS control F...
more info
GSFA20106 Image
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Good Ark Semiconductor - GSFA20106

MOSFET from Good Ark Semiconductor
200 V, 76 to 106 A, 340 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
76 to 106 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
9.4 to 10.7 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
340 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
more info
SiSD5300DN-T1-GE3 Image
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Vishay - SiSD5300DN-T1-GE3

MOSFET from Vishay
N-Channel 30 V (D-S) MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
198 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
87 milli-ohm
Gate Source Voltage:
-12 to 16 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Applications:
DC/DC converter, Synchronous rectification, Batter...
more info
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onsemi - NTMFS3D1N04XMT1G

MOSFET from onsemi
-20 to 20 V, 15.6 nC, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 to 83 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.7 to 3.1 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39 W
Temperature operating range:
-55 to 175 Degree C
Package:
SO-8
Industry:
Commercial, Industrial
Applications:
Motor Drive, Battery Protection, Oring
more info
P6B28HP2 Image
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Shindengen America - P6B28HP2

MOSFET from Shindengen America
280 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
280 V
Drain Source Resistance:
660 to 850 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
IXTN40P50P Image
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Littelfuse - IXTN40P50P

MOSFET from Littelfuse
-500 V, 205 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
miniBLOC, SOT-227
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
DMP3017SFK Image
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Diodes Incorporated - DMP3017SFK

MOSFET from Diodes Incorporated
-25 to 25 V, 21.6 to 42.7 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
9500 to 2500 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
17 W
Temperature operating range:
-55 to 150 Degree C
Package:
U-DFN2523-6
Applications:
Load Switch, Power Management Functions, DC-DC Con...
more info
ECB3R1M12YM4 Image
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Wolfspeed - ECB3R1M12YM4

MOSFET from Wolfspeed
1200 V, 390 to 450 A, Hex N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
390 to 450 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.1 to 6.3 milli-ohm
Gate Source Voltage:
-4 to 15 V
Power Dissipation:
1190 W
Temperature operating range:
-40 to 185 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Automotive Traction Inverters, Commercial, Constru...
more info
DN2535N3-G Image
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Microchip Technology - DN2535N3-G

MOSFET from Microchip Technology
350 V, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.12 A
Drain Source Breakdown Voltage:
350 V
Drain Source Resistance:
17000 to 25000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Normally-on switches, Solid state relays, Converte...
more info
AONG36322 Image
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Alpha & Omega Semiconductor - AONG36322

MOSFET from Alpha & Omega Semiconductor
30 V Dual Asymmetric N-Channel MOSFET for DC-DC Converter Applications

Product Specs

Transistor Polarity:
N-Channel
Continous Drain Current:
103 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.8 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
3.5 x 5 mm
Industry:
Commercial, Industrial
Applications:
DC/DC Converters in Computing, Servers, and POL, I...
more info
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Navitas Semiconductor - G2R1000MT33J

MOSFET from Navitas Semiconductor
3300 V, 2 to 5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 to 5 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
1000 to 2505 milli-ohm
Gate Source Voltage:
-5 to 20 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial
Applications:
Auxiliary Power Supply, 1500 V Solar Inverter Syst...
more info
G3R75MT12J Image
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GeneSiC Semiconductor - G3R75MT12J

MOSFET from GeneSiC Semiconductor
1200 V, 19 to 38 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 38 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 106 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
196 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
UJ4C075018K4S Image
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Qorvo - UJ4C075018K4S

MOSFET from Qorvo
750 V, N-Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 to 81 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
18 to 41 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
382 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial, Commercial
Applications:
EV charging, PV inverters, Switch mode power suppl...
more info
MCTL1D0N08Y-TP Image
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Micro Commercial Components - MCTL1D0N08Y-TP

MOSFET from Micro Commercial Components
80 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
226 to 320 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
0.8 to 1 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
416 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLL-8L
Industry:
Industrial, Commercial
more info
GCMS016C120S1-E1 Image
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SemiQ - GCMS016C120S1-E1

MOSFET from SemiQ
1200 V SiC Power Module

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
103 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
23 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
303 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227
Industry:
Industrial, Commercial
Applications:
Photovoltaic Inverter, Battery charger, Server pow...
more info
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