MOSFETs from Manufacturers in United States - Page 71

9,086 MOSFETs from 25 manufacturers meet your specification.
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9,086 MOSFETs from 25 Manufacturers
9,086 Products from 25 Manufacturers
Page 71 of 606
1200 V Automotive-Grade SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 to 18 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
135 to 245 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
87 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Automotive, Industrial, Commercial
Applications:
xEV DC-DC, Solar/PV, Energy Storage Systems, Unint...
more info
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
5.6 to 14 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
more info
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
300 to 350 milliohm
Gate Source Voltage:
20 V
Temperature operating range:
-55 to 150 Degree C
Industry:
Industrial, Commercial, Military
more info
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
40 to 73 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Battery protection, Load switch, Power management
more info
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
5.8 to 12.5 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Battery switch, Load switch, Power management
more info
-20 to 20 V, 18.4 to 40.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
133 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.6 to 4.2 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
39 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
8.3 to 14.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Automotive
more info
-65 V, 185 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-120 A
Drain Source Breakdown Voltage:
-65 V
Drain Source Resistance:
10 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
298 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263 AA
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
-20 to 20 V, 9.7 to 19.3 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
19 to 50 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
-8 to 19 V, 188 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 to 91 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
10.5 to 21 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
416 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO-247-4
Applications:
EV charging, Server power supplies, Solar PV inver...
more info
-200 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.175 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
7000 to 15000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Logic-Level Interfaces (Ideal for TTL and CMOS), S...
more info
650 V Trench-Assisted Planar SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 to 125 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
20.5 to 27.5 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
455 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLL
Industry:
Automotive, Commercial, Electric Vehicle, Industri...
Applications:
xEV - OBC & DC-DC, EV Fast Charging Infrastructure...
more info
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
180 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
2.7 to 3.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
357 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2-PAK
Industry:
Commercial, Industrial
more info
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
8000 to 45000 milliohm
Gate Source Voltage:
10 V
Temperature operating range:
-65 to 150 Degree C
Industry:
Industrial, Commercial, Military
more info
10 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.08 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
14000 to 5000000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
8-Pin SOIC
Industry:
Commercial, Industrial
Applications:
Low overhead current mirrors and current sources, ...
more info

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