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MOSFETs - Page 99

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 99 of 1280
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Goford Semiconductor - SLP740C

MOSFET from Goford Semiconductor
400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10.5 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
430 to 550 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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Nuvoton Technology - FCAB21A60L

MOSFET from Nuvoton Technology
12 V, 8.5 to 20.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
8.5 to 20.0 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
2.40 to 6.95 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
3.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSP
Industry:
Industrial, Commercial
more info
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Sensitron Semiconductor - SHD225701

MOSFET from Sensitron Semiconductor
100 V, 55 A, N-Channel Enhancement Mode HERMETIC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.011 to 0.015 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
210 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254
Industry:
Industrial, Commercial
more info
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UN Semiconductor - UN600N23T

MOSFET from UN Semiconductor
60 V, 3 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
75 to 110 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Load Switch for Portable Devices, Voltage Controll...
more info
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FrelTec - SSF6908

MOSFET from FrelTec
68 V, 75 to 84 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 to 84 A
Drain Source Breakdown Voltage:
68 V
Drain Source Resistance:
6.8 to 12.7 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
181 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESNR04R030

MOSFET from Hunan Jingxin Microelectronics
40 V, 60 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 to 80 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.2 to 3.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM110N03C

MOSFET from JSMicro Semiconductor
30 V, 110 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.0 to 5.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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First Silicon - FTK3960D

MOSFET from First Silicon
30 V, 100 W, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
57 to 70 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.9 to 3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
MB / VGA / Vcore, POL Applications, SMPS 2nd SR
more info
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Cystech Electronics - MTA7D0P02V8-0-T6-G

MOSFET from Cystech Electronics
-20 V, -9.6 to -49 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-9.6 to -49 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
7.7 to 17.5 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
41.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3×3
Industry:
Industrial, Commercial
more info
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PFC Device - PRM034N06E

MOSFET from PFC Device
60 V, 13.9 to 22 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.9 to 22 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
28 to 40 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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VBsemi Electronics - VBGQA1400

MOSFET from VBsemi Electronics
40 V, 150 to 250 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 to 250 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.8 to 2 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
8.3 to 136 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN8(5X6)
Industry:
Industrial, Commercial
more info
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uPI Semiconductor - QM3016S

MOSFET from uPI Semiconductor
30 V, 12 to 15 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 15 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.4 to 6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Small pow...
more info
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Isahaya Electronics - INK0112AU1

MOSFET from Isahaya Electronics
30 V, 0.5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.4 to 1.3 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-75A
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
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Oriental Semiconductor - OSQ120R025H4T2F_NB

MOSFET from Oriental Semiconductor
1200 V, 50 to 72 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 to 72 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
25 to 48 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - T2N7002H

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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