The DMM1000UHM33-WA500 from Dynex Semiconductor is a Half Bridge Silicon Carbide Power MOSFET. It includes multi-level converter, half-bridge, chopper, dual, single, and bi-directional switch configurations covering voltages from 750-6500 V and currents up to 3600A. This MOSFET has a drain-source voltage of 3300 V and a gate threshold voltage of up to 3.6 V. It has a drain current of 1000 A, a peak drain current of 2000 A, and a drain-source resistance of 3.96 milli-ohms. This MOSFET supports a maximum power dissipation of 5880 W. It offers low switching losses and low inductive designs. It features an AlSiC baseplate with AlN substrates and can withstand a maximum junction temperature of 175°C. This RoHS-compliant MOSFET is available as a module that measures 144 x 99.8 x 35 mm and is ideal for traction drives, high-reliability converters, motor drives, and smart grids.
