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TQM100NB04CV RGG

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TQM100NB04CV RGG Image

The TQM100NB04CV RGG from Taiwan Semiconductor is an N-Channel Automotive MOSFET. It has a drain-source breakdown voltage of 40 V, a gate threshold voltage of up to 3.8 V, and a drain-source on-resistance of less than 10 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of 47 A and a pulsed drain current of 188 A. It can withstand a junction temperature of up to 150°C. This RoHS-compliant MOSFET is available in a surface-mount package that measures 3.4 x 3.46 mm and is suitable for 12 V automotive systems, DC-DC converters, solenoid and motor drivers, and automotive applications.

Product Specifications

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Product Details

  • Part Number
    TQM100NB04CV RGG
  • Manufacturer
    Taiwan Semiconductor
  • Description
    40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channels
    Single View all
  • Continous Drain Current
    47 A
  • Drain Source Resistance
    7.6 to 13 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    1.8 to 3.8 V
  • Gate Charge
    22 nC
  • Power Dissipation
    0.5 to 43 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101 View all
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    PDFN33
  • Applications
    12V Automotive Systems, Solenoid and Motor Control, Automotive Transmission Control, DC-DC Converters

Technical Documents
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