The ISC033N10NM8 from Infineon Technologies is an N-Channel MOSFET. It has a drain-source breakdown voltage of 100 V and a drain-source resistance of 3.33 milliohms. This RoHS-compliant MOSFET supports a continuous drain current of 150 A, a peak drain current of 600 A, and has a maximum power dissipation of 179 W. It integrates soft-body diode recovery with low reverse-recovery charge and has very low on-resistance, high current capability, and a tight gate-source threshold voltage spread. This JEDEC-qualified power transistor is 100% avalanche tested and is classified as MSL 1 in accordance with J-STD-020 standards. It is available in a surface-mount package that measures 5.35 x 6.10 mm.