The TQM070NH04CR RLG from Taiwan Semiconductor is a Single N-Channel Automotive MOSFET. It has a drain-source breakdown voltage of 40 V, a gate threshold voltage of up to 3.6 V, and a drain-source on-resistance of less than 8.4 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of 16-54 A and a pulsed drain current of 216 A. It features an outstanding figure of merit (FOM) and withstands a junction temperature of up to 175°C. This RoHS-compliant MOSFET is available in a surface-mount package that measures 6.45 x 5 mm and is suitable for DC-DC converters, solenoid and motor drivers, and automotive applications.
