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SSM3K389R

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SSM3K389R Image

The SSM3K389R from Toshiba is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 141 to 200 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 1.1 to 2.1 V. Tags: Surface Mount. More details for SSM3K389R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K389R
  • Manufacturer
    Toshiba
  • Description
    60 V, 2 A, 1 to 1.7 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Technology
    Silicon View all
  • Transistor Polarity
    N-Channel View all
  • Dimensions
    2.9 × 2.4 × 0.8 mm
  • Number of Channels
    Single View all
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    141 to 200 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    1.1 to 2.1 V
  • Gate Charge
    1.84 nC
  • Power Dissipation
    1 to 1.7 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-23F
  • Applications
    Power Management Switches

Technical Documents
View details on the manufacturer's website
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