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GaN Power Transistors from Manufacturers in United States - Page 5

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 5 of 15
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Solid State Devices - SGF30E100Z8

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254Z
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2044 Image
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Efficient Power Conversion - EPC2044

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
7 to 10.5 milli-ohm
Continous Drain Current:
9.4 A
Pulsed Drain Current:
89 A
Total Charge:
5.5 nC
Input Capacitance:
664 pF
Output Capacitance:
294 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
48 V Servers, Lidar/Pulsed Power, Isolated Power S...
Dimensions:
2.15 x 1.25 mm
more info
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EPC Space - CDA04N08X2S

GaN Power Transistor from EPC Space
40 V, 8 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
13 to 16 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.8 nC
Input Capacitance:
312 pF
Output Capacitance:
270 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.7 mm
more info
NV6169 Image
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Navitas Semiconductor - NV6169

GaN Power Transistor from Navitas Semiconductor
650 V GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
45 to 55 milli-ohm
Continous Drain Current:
24 A
Pulsed Drain Current:
66 A
Total Charge:
75 nC
Output Capacitance:
96 pF
Turn-on Delay Time:
22 ns
Turn-off Delay Time:
13 ns
Rise Time:
6 ns
Fall Time:
14 ns
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PQFN 8 x 8
Applications:
AC-DC, DC-DC, ACF, Buck, Boost, Half Bridge, Full ...
Dimensions:
8.0 x 8.0 mm
more info
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Central Semiconductor - CCSPG0420N

GaN Power Transistor from Central Semiconductor
40 V, 20 A, GaN Transistor

Product Specs

Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
4 to 4.8 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
100 A
Total Charge:
15.8 nC
Input Capacitance:
886.5 pF
Output Capacitance:
381.2 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CSP2X2
more info
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Solid State Devices - SGF48N20M

GaN Power Transistor from Solid State Devices
200 V, 11 to 16 milli-ohm, 40 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
11 to 16 milli-ohm
Continous Drain Current:
40 A
Pulsed Drain Current:
200 A
Total Charge:
9 to 11 nC
Input Capacitance:
950 to 1140 pF
Output Capacitance:
450 to 680 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
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Efficient Power Conversion - EPC2054

GaN Power Transistor from Efficient Power Conversion
200 V, 32 to 43 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
32 to 43 milli-ohm
Continous Drain Current:
3 A
Pulsed Drain Current:
32 A
Total Charge:
4.3 nC
Input Capacitance:
573 pF
Output Capacitance:
134 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
1.3 x 1.3 mm
more info
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EPC Space - CDA10N05X2S

GaN Power Transistor from EPC Space
100 V, 5 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
26 to 30 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
2.2 nC
Input Capacitance:
233 pF
Output Capacitance:
170 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.7 mm
more info
NV6136A-RA Image
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Navitas Semiconductor - NV6136A-RA

GaN Power Transistor from Navitas Semiconductor
700 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Drain Source Voltage:
700 V
Drain Source Resistance:
238 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
16 A
Total Charge:
17 nC
Output Capacitance:
22 pF
Turn-on Delay Time:
25 ns
Turn-off Delay Time:
22 ns
Rise Time:
12 ns
Fall Time:
7 ns
Temperature operating range:
-40 to 125 degree C
Package Type:
Surface Mount
Package:
PQFN 6 x 8
Applications:
AC-DC, DC-DC, DC-AC, QR flyback, ACF, Buck, Boost,...
Dimensions:
8 x 6 mm
more info
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Solid State Devices - SGF48N20

GaN Power Transistor from Solid State Devices
200 V, 8 to 11 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
8 to 11 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
200 A
Total Charge:
12 to 15 nC
Input Capacitance:
950 to 1140 pF
Output Capacitance:
450 to 680 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMG
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC2070 Image
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Efficient Power Conversion - EPC2070

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement Mode GaN Power Transistor for LiDAR Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
18 to 23 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
34 A
Total Charge:
2.5 nC
Input Capacitance:
386 pF
Output Capacitance:
123 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC from 48 V–60 V input, ToF mod...
Dimensions:
1.3 x 0.85 mm
more info
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EPC Space - CDA20N04X4S

GaN Power Transistor from EPC Space
200 V, 4 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
65 to 100 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
6 A
Total Charge:
3 nC
Input Capacitance:
150 pF
Output Capacitance:
90 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.5 mm
more info
NV6117 Image
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Navitas Semiconductor - NV6117

GaN Power Transistor from Navitas Semiconductor
800 V GaNFast Power IC for Telecom Applications

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
120 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
24 A
Total Charge:
27 nC
Output Capacitance:
27 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
5 x 6 mm
more info
TDG650E601TSP Image
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Teledyne e2v HiRel Electronics - TDG650E601TSP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Silicon Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
PCB Mount
Applications:
Battery management, Traction Drive, dc-dc Converte...
Dimensions:
9.00 x 7.64 mm
more info
EPC2361 Image
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Efficient Power Conversion - EPC2361

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1 milli-ohm
Continous Drain Current:
101 A
Pulsed Drain Current:
519 A
Total Charge:
28 nC
Input Capacitance:
4094 pF
Output Capacitance:
1147 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Applications:
High Power PSU AC-DC Synchronous Rectification, Hi...
Dimensions:
3 x 5 mm
more info
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