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MOSFETs from Manufacturers in China - Page 20

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 20 of 77
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Yangjie Electronic Technology - YJP130G10A

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
130 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4 to 6.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
310 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
GT100N12T Image
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Goford Semiconductor - GT100N12T

MOSFET from Goford Semiconductor
120 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
8 to 10 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS or LED Driver, U...
more info
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Hunan Jingxin Microelectronics - ES3N10

MOSFET from Hunan Jingxin Microelectronics
100 V, 1.3 to 2.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.3 to 2.0 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
235 to 300 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ120R040K7T2F

MOSFET from Oriental Semiconductor
1200 V, 38 to 48 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 to 48 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 69 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - 2N7002HT

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-523
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJG90G10A

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
90 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.1 to 7.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN
Industry:
Industrial, Commercial
Applications:
Power switching application, Hard switched and hig...
more info
1002 Image
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Goford Semiconductor - 1002

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
200 to 260 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ES3416A

MOSFET from Hunan Jingxin Microelectronics
20 V, 5.8 to 7.5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.8 to 7.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
13 to 23 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.39 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG80R200FF-F

MOSFET from Oriental Semiconductor
800 V, 11.4 to 18 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.4 to 18 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
150 to 420 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
34 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial, Automotive
Applications:
PC power, LED lighting, Telecom power, Server powe...
more info
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Galaxy Century Microelectronics - BSS84EDW

MOSFET from Galaxy Century Microelectronics
±20 V, -0.13 A Dual P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.13 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
2000 to 6000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
Applications:
P-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJL3407A

MOSFET from Yangjie Electronic Technology
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
36 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
GT105N10T Image
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Goford Semiconductor - GT105N10T

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS or LED Driver, U...
more info
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Hunan Jingxin Microelectronics - ES3406A

MOSFET from Hunan Jingxin Microelectronics
30 V, 3.3 to 4.3 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.3 to 4.3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
34 to 70 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ65R020TT2F

MOSFET from Oriental Semiconductor
650 V, 64 to 90 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 to 90 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
20 to 34 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
394 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLL
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - BL3428

MOSFET from Galaxy Century Microelectronics
±10 V, 0.4 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1200 to 4000 milli-ohm
Gate Source Voltage:
±10 V
Power Dissipation:
0.42 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
Applications:
Load switch appliances
more info
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