MOSFETs from Manufacturers in Germany - Page 8

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
1,322 Products from 3 Manufacturers
Page 8 of 89
750 V Automotive-Grade SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49 to 70 A
Drain Source Breakdown Voltage:
840 V
Drain Source Resistance:
22 to 49 milli-ohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
272 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-HDSOP-22
Industry:
Automotive, Industrial, Commercial
Applications:
Uni- and bidirectional On Board Chargers and HV-LV...
more info
65 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
90 A
Drain Source Breakdown Voltage:
65 V
Drain Source Resistance:
5.7 to 7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info
100 V, 32 to 45 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 to 45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
20.5 to 44.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
163 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
1200 V SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 to 48 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 94 milli-ohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
109 to 218 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO247-4
Industry:
Industrial, Commercial
Applications:
General purpose drives (GPD), EV Charging, Online ...
more info
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.9 to 3.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
QFN
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info
55 V, 100 to 140 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 to 140 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
3.8 to 6.4 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
220 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
750 V Automotive Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 30 A
Drain Source Breakdown Voltage:
840 V
Drain Source Resistance:
56 to 124 milli-ohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
128 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-HDSOP-22
Industry:
Automotive, Industrial, Commercial
Applications:
Uni- and bidirectional On Board Chargers and HV-LV...
more info
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.1 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
85 to 115 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-26
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info
600 V, 6 to 10 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 10 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.69 to 1.6 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
156 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
1200 V, 27 to 38 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 to 38 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
53 to 124 milli-ohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
91 to 182 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO247-4
Industry:
Industrial, Commercial
Applications:
General purpose drives (GPD), EV Charging, Online ...
more info
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
245 to 255 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info
20 V, 0.35 to 0.6 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.35 to 0.6 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
0.41 to 1.25 ohm
Gate Source Voltage:
-6 to 6 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-883
Industry:
Industrial, Commercial
more info
750 V Silicon Carbide MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 30 A
Drain Source Breakdown Voltage:
840 V
Drain Source Resistance:
56 to 124 milli-ohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
128 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-HDSOP-22
Industry:
Industrial, Commercial
Applications:
Solid state relays and circuit breakers, EV chargi...
more info
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
25 to 35 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
QFN
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info
1400 V, 50 to 71 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 to 71 A
Drain Source Breakdown Voltage:
1400 V
Drain Source Resistance:
29 to 79.8 milli-ohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
144 to 288 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO247-4
Industry:
Industrial, Commercial
Applications:
Commercial, construction and agricultural vehicles...
more info

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