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MOSFETs from Manufacturers in Germany - Page 30

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 30 of 89
IRHN7150 Image
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Infineon Technologies - IRHN7150

MOSFET from Infineon Technologies
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
76 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
Industry:
Space, Military
more info
IRHM9064 Image
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Infineon Technologies - IRHM9064

MOSFET from Infineon Technologies
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-35 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
53 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRHMS57264SE Image
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Infineon Technologies - IRHMS57264SE

MOSFET from Infineon Technologies
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
61 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
Industry:
Space, Military
Applications:
DC-DC converter, Motor drives
more info
IRHLF87Y20 Image
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Infineon Technologies - IRHLF87Y20

MOSFET from Infineon Technologies
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
32 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
15.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
Applications:
Synchronous rectification, Redundant power distrib...
more info
IRHY57130CM Image
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Infineon Technologies - IRHY57130CM

MOSFET from Infineon Technologies
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
70 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Space, Military
more info
IRHE67230 Image
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Infineon Technologies - IRHE67230

MOSFET from Infineon Technologies
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
175 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
Industry:
Space, Military
more info
IRHNS67260 Image
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Infineon Technologies - IRHNS67260

MOSFET from Infineon Technologies
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
28 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
Industry:
Space, Military
more info
IRHY57133CMSE Image
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Infineon Technologies - IRHY57133CMSE

MOSFET from Infineon Technologies
130 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
130 V
Drain Source Resistance:
90 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Space, Military
more info
IRHNA7260 Image
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Infineon Technologies - IRHNA7260

MOSFET from Infineon Technologies
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
43 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
more info
IRHN7450 Image
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Infineon Technologies - IRHN7450

MOSFET from Infineon Technologies
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
Industry:
Space, Military
more info
IRHNJ6S7234 Image
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Infineon Technologies - IRHNJ6S7234

MOSFET from Infineon Technologies
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
IRHF57130 Image
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Infineon Technologies - IRHF57130

MOSFET from Infineon Technologies
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
80 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
IRHF67234 Image
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Infineon Technologies - IRHF67234

MOSFET from Infineon Technologies
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.5 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
250 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
IRHNA6S7260 Image
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Infineon Technologies - IRHNA6S7260

MOSFET from Infineon Technologies
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
28 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
more info
IRHNA597160 Image
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Infineon Technologies - IRHNA597160

MOSFET from Infineon Technologies
-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-47 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
49 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
more info
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