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MOSFETs from Manufacturers in Germany - Page 27

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 27 of 89
IRHNA5S97160 Image
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Infineon Technologies - IRHNA5S97160

MOSFET from Infineon Technologies
-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-47 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
49 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
more info
IRHMS57064 Image
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Infineon Technologies - IRHMS57064

MOSFET from Infineon Technologies
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
Industry:
Space, Military
more info
IRHE7230 Image
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Infineon Technologies - IRHE7230

MOSFET from Infineon Technologies
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
360 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
Industry:
Space, Military
more info
IRHNA9160 Image
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Infineon Technologies - IRHNA9160

MOSFET from Infineon Technologies
-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-38 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
71 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
more info
IRHMS9A7064 Image
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Infineon Technologies - IRHMS9A7064

MOSFET from Infineon Technologies
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
Industry:
Space, Military
more info
IRHE7130 Image
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Infineon Technologies - IRHE7130

MOSFET from Infineon Technologies
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
185 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
Industry:
Space, Military
more info
IRHNJ597Z30 Image
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Infineon Technologies - IRHNJ597Z30

MOSFET from Infineon Technologies
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-22 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
70 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
IRHLNM77110 Image
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Infineon Technologies - IRHLNM77110

MOSFET from Infineon Technologies
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
290 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
23.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2
Industry:
Space, Military
more info
IRHF7430SE Image
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Infineon Technologies - IRHF7430SE

MOSFET from Infineon Technologies
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1770 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
IRHLF770Z4 Image
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Infineon Technologies - IRHLF770Z4

MOSFET from Infineon Technologies
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.6 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
650 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
IRHYS597Z30CM Image
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Infineon Technologies - IRHYS597Z30CM

MOSFET from Infineon Technologies
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
Industry:
Space, Military
more info
IRHLUBC7970Z4 Image
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Infineon Technologies - IRHLUBC7970Z4

MOSFET from Infineon Technologies
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.53 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1400 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.57 W
Temperature operating range:
-55 to 150 Degree C
Package:
UBC
Industry:
Space, Military
more info
IRHMS6S7160 Image
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Infineon Technologies - IRHMS6S7160

MOSFET from Infineon Technologies
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
Industry:
Space, Military
more info
IRHYB597034CM Image
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Infineon Technologies - IRHYB597034CM

MOSFET from Infineon Technologies
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
87 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Tabless Low Ohmic
Industry:
Space, Military
more info
IRHF7330SE Image
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Infineon Technologies - IRHF7330SE

MOSFET from Infineon Technologies
400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.9 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
1390 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
Applications:
DC-DC converter, Motor drives
more info
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