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MOSFETs from Manufacturers in Germany - Page 76

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
1,322 Products from 3 Manufacturers
Page 76 of 89
IPD70N12S3L-12 Image
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Infineon Technologies - IPD70N12S3L-12

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 70 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
9.6 to 15.2 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO252-3-11
Applications:
Automotive
more info
IPI100N12S3-05 Image
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Infineon Technologies - IPI100N12S3-05

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
4 to 5.1 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO262-3-1
Applications:
Automotive
more info
IPD30N12S3L-31 Image
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Infineon Technologies - IPD30N12S3L-31

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 to 30 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
26 to 42 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO252-3-11
Applications:
Automotive
more info
IPB50N12S3L-15 Image
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Infineon Technologies - IPB50N12S3L-15

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37 to 50 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
12.8 to 20.9 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
IPB35N12S3L-26 Image
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Infineon Technologies - IPB35N12S3L-26

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 to 35 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
20.3 to 32.2 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
71 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
AUIRFSL4010 Image
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Infineon Technologies - AUIRFSL4010

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
127 to 180 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.9 to 4.7 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
375 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-262
Applications:
Automotive
more info
IPB17N25S3-100 Image
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Infineon Technologies - IPB17N25S3-100

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.3 to 17 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
85 to 100 Mhms
Gate Source Voltage:
20 V
Power Dissipation:
107 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
IPB100N12S3-05 Image
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Infineon Technologies - IPB100N12S3-05

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
4 to 5.1 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
IPP70N12S3-11 Image
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Infineon Technologies - IPP70N12S3-11

MOSFET from Infineon Technologies
120 - 300 V, N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 70 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
9.4 to 11.6 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO220-3-1
Applications:
Automotive
more info
IPW65R080CFDA Image
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Infineon Technologies - IPW65R080CFDA

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27.4 to 43.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.072 to 0.190 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
391 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO247
Applications:
Automotive
more info
IPW60R045CPA Image
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Infineon Technologies - IPW60R045CPA

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 to 60 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.04 to 0.110 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
431 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO247-3
Applications:
Automotive
more info
AUIRFR9024N Image
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Infineon Technologies - AUIRFR9024N

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to -8 A
Drain Source Breakdown Voltage:
-55 V
Drain Source Resistance:
0.175 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 150 Degree C
Package:
D-Pak
Applications:
Automotive
more info
IPB60R099CPA Image
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Infineon Technologies - IPB60R099CPA

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 31 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.09 to 0.105 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
255 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
IPW65R075CFD7A Image
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Infineon Technologies - IPW65R075CFD7A

MOSFET from Infineon Technologies
600-800 V, N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 to 32 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.063 to 0.140 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
171 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO247-3
Applications:
UnidirectionalandbidirectionalDC-Dcconverters, On-...
more info
AUIRF5210S Image
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Infineon Technologies - AUIRF5210S

MOSFET from Infineon Technologies
20-150 V, P-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-38 to -24 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
60 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
3.1 to 170 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2 -Pak
Applications:
Automotive
more info
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