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MOSFETs from Manufacturers in Japan - Page 35

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 35 of 161
RJF0613JSP Image
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Renesas - RJF0613JSP

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 40 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Automotive
Applications:
Power Switching
more info
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ROHM Semiconductor - RD3G04BBJHRBTL

MOSFET from ROHM Semiconductor
-40 V, -40 to 40 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
18.1 to 31.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
53 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
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Panasonic Corporation - FC694309ER

MOSFET from Panasonic Corporation
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1000 to 12000 Milliohm
Gate Source Voltage:
-6 to 6 V
Power Dissipation:
0.125 W
Temperature operating range:
150 Degree C
Package:
SOT-666
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INJ0002AC1

MOSFET from Isahaya Electronics
-30 V, -200 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-200 mA
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
3.0 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
SSM6L12TU Image
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Toshiba - SSM6L12TU

MOSFET from Toshiba
-20 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 to 0.5 A
Drain Source Breakdown Voltage:
-20 to 30 V
Drain Source Resistance:
140 to 430 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
High-Speed Switching Applications
more info
RJK0851DPB Image
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Renesas - RJK0851DPB

MOSFET from Renesas
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
18 to 28 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Switching Mode Power Supply
more info
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ROHM Semiconductor - AG185FGD3HRBTL

MOSFET from ROHM Semiconductor
40 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.5 to 4.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
96 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
Applications:
Automotive Systems
more info
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Panasonic Corporation - FL6L52030L

MOSFET from Panasonic Corporation
-20 V, P-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
300 to 560 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INJ0003AU1

MOSFET from Isahaya Electronics
-20 V, -200 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-200 mA
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
2.0 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-75A
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
SSM6P15FU Image
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Toshiba - SSM6P15FU

MOSFET from Toshiba
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 32000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Package:
UF6
Applications:
High-Speed Switching Applications, Analog Switchin...
more info
RJK1028DNS Image
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Renesas - RJK1028DNS

MOSFET from Renesas
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
125 to 180 milliohm
Gate Source Voltage:
-5 to 12 V
Power Dissipation:
10 W
Temperature operating range:
-55 to 150 Degree C
Package:
HWSON-8
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - RQ5G060BGTCL

MOSFET from ROHM Semiconductor
40 V, -6 to 6 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
15.9 to 35.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.7 to 1.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
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Panasonic Corporation - FJ6K01010L

MOSFET from Panasonic Corporation
-12 V, P-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
26 to 54 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.7 W
Temperature operating range:
150 Degree C
Package:
WSMini6-F1-B
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INJ0003AC1

MOSFET from Isahaya Electronics
-20 V, -200 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-200 mA
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
2.0 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
TJ80S04M3L Image
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Toshiba - TJ80S04M3L

MOSFET from Toshiba
-40 V, 158 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-80 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
4 to 7.9 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
100 W
Package:
DPAK
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
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