MOSFETs from Manufacturers in Switzerland - Page 10

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Page 10 of 77
-30 to 30 V, 11 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
1050 V
Drain Source Resistance:
1400 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
-20 to 20 V, 16.5 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
136 to 180 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.3 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-223
Applications:
Switching applications
more info
-30 to 30 V, 13.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
950 to 1200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
650 to 800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
-30 to 30 V, 5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1500 to 1750 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
300 to 375 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 3.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2100 to 2600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 32.4 to 45.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1900 to 2400 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 30 to 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
1500 V
Drain Source Resistance:
5000 to 7000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
160 W
Temperature operating range:
DC to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
30 V, 10 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
4200 to 5000 Milliohm
Gate Source Voltage:
30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 32.4 to 45.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1900 to 2400 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3800 to 4500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 29.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
1500 V
Drain Source Resistance:
6000 to 9000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 2.63 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2750 to 3250 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 48 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17.5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
275 to 330 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info

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