MOSFETs from Manufacturers in Switzerland - Page 15

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Page 15 of 77
-30 to 30 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
210 to 250 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 44 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.6 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
7000 to 13000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3PF
Applications:
Switching applications
more info
-30 to 30 V, 9.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2800 to 3500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
650 to 800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
550 to 630 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
470 to 600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP ultra narrow leads
Applications:
Switching applications
more info
-30 to 30 V, 29.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
1500 V
Drain Source Resistance:
6000 to 9000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
H2PAK-2
Applications:
Switching applications
more info
-30 to 30 V, 29 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
370 to 450 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 10.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2100 to 2500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 5x6 VHV
Applications:
Switching applications
more info
-30 to 30 V, 72 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1100 to 1300 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 48 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17.5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
280 to 330 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
H2PAK-2
Applications:
Switching applications
more info
-30 to 30 V, 13.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1650 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3PF
Applications:
Switching applications
more info
-30 to 30 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
300 to 375 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 26 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
290 to 340 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 44.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
620 to 690 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
H2PAK-2
Applications:
Switching applications
more info

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