MOSFETs from Manufacturers in Switzerland - Page 60

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Page 60 of 77
-15 to 15 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
35 to 55 Milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Switching applications
more info
-20 to 20 V, 90 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
63 to 75 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Applications:
Switching applications
more info
-16 to 16 V, 100 to 136 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
5 to 8 Milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
HIGH CURRENT, HIGH SPEED SWITCHING, SOLENOID AND R...
more info
-20 to 20 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
20 to 24 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-20 to 20 V, 164 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
35 to 45 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
-20 to 20 V, 72 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.9 to 6.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
H2PAK-2
Applications:
Switching applications
more info
-20 to 20 V, 48 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
57 to 63 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Switching applications
more info
- 25 to 25 V, 29 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
175 to 200 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-20 to 20 V, 84 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
28 to 34 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 17 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
350 to 380 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
33 V
Drain Source Resistance:
7 to 11 Milliohm
Power Dissipation:
110 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching application, Power tools
more info
- 25 to 25 V, 46 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
29 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
84 to 99 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
210 W
Temperature operating range:
-55 to 150 Degree C
Package:
HU3PAK
Applications:
Switching applications
more info
- 25 to 25 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
162 to 190 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
125 W
Temperature operating range:
150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
- 25 to 25 V, 13.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
550 to 600 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-20 to 20 V, 193 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
180 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.7 to 2.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
315 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications
more info

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