MOSFETs from Manufacturers in Switzerland - Page 61

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-30 to 30 V, 75 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
450 to 500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-20 to 20 V, 68.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
55 to 69 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-20 to 20 V, 46.5 to 62 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
25 to 28 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-20 to 20 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8 to 10 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 175 Degree C
Package:
H2PAK-2
Applications:
Switching applications
more info
-20 to 20 V, 75 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
38 to 45 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
-20 to 20 V, 110 to 150 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
270 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.25 to 1.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerSO-10
Applications:
Switching applications
more info
-20 to 20 V, 25 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14.5 to 18 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-20 to 20 V, 90 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
63 to 75 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-20 to 20 V, 44.5 to 60 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
15 to 18 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-20 to 20 V, 58 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
33 V
Drain Source Resistance:
8 to 11 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
180 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications – ABS, solenoid drivers – M...
more info
-20 to 20 V, 180 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
180 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
2.3 to 2.7 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
315 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
52 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
33 to 45 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
HIGH CURRENT, HIGH SPEED SWITCHING DC CHOPPERs, ID...
more info
-20 to 20 V, 38 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
65 to 75 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 16.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
230 to 280 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications, LLC converters, Boost PFC ...
more info
-20 to 20 V, 10 to 14 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
220 to 250 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-65 to 175 Degree C
Package:
IPAK
Applications:
Switching applications
more info

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