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MOSFETs from Manufacturers in United States - Page 73

9,086 MOSFETs from 25 manufacturers meet your specification.
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9,086 MOSFETs from 25 Manufacturers
9,086 Products from 25 Manufacturers
Page 73 of 606
IXTT16P60P Image
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Littelfuse - IXTT16P60P

MOSFET from Littelfuse
-600 V, 92 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-16 A
Drain Source Breakdown Voltage:
-600 V
Drain Source Resistance:
720 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
460 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-268
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
DMP26M7UFG Image
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Diodes Incorporated - DMP26M7UFG

MOSFET from Diodes Incorporated
-10 to 10 V, 75 to 156 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
4200 to 9000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
41 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8
Industry:
Automotive, Commercial, Industrial
Applications:
Load Switch, Power Management Functions
more info
C3M0032120D Image
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Wolfspeed - C3M0032120D

MOSFET from Wolfspeed
-8 to 19 V, 114 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
23 to 57.6 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
283 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO 247-3
Applications:
Solar inverters, EV motor drive, High voltage DC/D...
more info
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Microchip Technology - TP2424

MOSFET from Microchip Technology
-240 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.316 A
Drain Source Breakdown Voltage:
-240 V
Drain Source Resistance:
8000 to 10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Commercial, Industrial
Applications:
Logic-Level Interfaces (Ideal for TTL and CMOS), S...
more info
MCAC30N06Y Image
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Micro Commercial Components - MCAC30N06Y

MOSFET from Micro Commercial Components
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
16 to 22 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060
Industry:
Commercial, Industrial
more info
CEDM8001 BK Image
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Central Semiconductor - CEDM8001 BK

MOSFET from Central Semiconductor
20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1900 to 45000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.1 W
Temperature operating range:
-65 to 150 Degree C
Package:
SOT-883L
Industry:
Industrial, Commercial
Applications:
Load/Power switches, DC - DC converters, Battery p...
more info
ALD1101ASAL Image
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Advanced Linear Devices - ALD1101ASAL

MOSFET from Advanced Linear Devices
10 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.025 to 0.04 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
50000 to 750000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
RM3401Y Image
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Rectron Semiconductor - RM3401Y

MOSFET from Rectron Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
47 to 130 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
PWM applications, Load switch, Power management, H...
more info
SiS126DN-T1-GE3 Image
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Vishay - SiS126DN-T1-GE3

MOSFET from Vishay
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45.1 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
8.5 to 12.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
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onsemi - NVMFS6D1N08HT1G

MOSFET from onsemi
-20 to 20 V, 10 to 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
89 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.5 to 5.5 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Synchronous Rectification, AC-DC and DC-DC Power S...
more info
P9B30HP2F Image
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Shindengen America - P9B30HP2F

MOSFET from Shindengen America
300 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
440 to 550 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
IXTH10P60 Image
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Littelfuse - IXTH10P60

MOSFET from Littelfuse
-600 V, 135 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-600 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switching, Push Pull Amplifiers, DC Chop...
more info
DMP32D4SW Image
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Diodes Incorporated - DMP32D4SW

MOSFET from Diodes Incorporated
-20 to 20 V, 0.6 to 1.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2400 to 4000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.432 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT323
Applications:
Load Switch, Portable Applications, Power Manageme...
more info
C3M0065090D Image
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Wolfspeed - C3M0065090D

MOSFET from Wolfspeed
-8 to 19 V, 35 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 to 36 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
65 to 90 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3
Applications:
Renewable energy, EV battery chargers, High voltag...
more info
APT60M80L2VR Image
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Microchip Technology - APT60M80L2VR

MOSFET from Microchip Technology
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
80 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
833 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264 MAX
Industry:
Commercial, Military
more info
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