MOSFETs - Page 131

19,197 MOSFETs from 69 manufacturers meet your specification.
19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 131 of 1280
-20 to 20 V, 30 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-42 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
23 to 34 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerFLAT 5x6
Applications:
Switching applications
more info
120 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
12.4 to 15.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
44 W
Temperature operating range:
150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
-150 V, 55 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-36 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263 AA
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
-25 to 25 V, 31.2 to 64.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
5700 to 13000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
V-DFN3333-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
-4 to 15 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
67 to 90 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
18.2 to 33.8 milli-ohm
Gate Source Voltage:
-4 to 15 V
Temperature operating range:
-55 to 175 Degree C
Industry:
Industrial, Commercial
Applications:
EV Chargers, Server & Telecom PSU, UPS, Solar Inve...
more info
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
100 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
960 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial
Applications:
PFC and other boost converter, Buck converter, Two...
more info
55 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
181 to 200 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
1.63 to 4.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
333 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56E
Applications:
Brushless DC motor control, Synchronous rectifier ...
more info
650 V, 56 to 108 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 to 108 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
20.5 to 32 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
343 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial
Applications:
xEV-OBC and DC-DC, EV Fast Charging Infrastructure...
more info
-40 V, P-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.3 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
25 to 70 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
1.79 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Switching Circuit
more info
500 V, 11 to 16 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 16 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.4 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
173.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.1 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
85 to 115 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-26
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info
30 V, 11.1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4.5 to 8.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN56
Industry:
Commercial, Industrial
more info
-30 to 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19.3 to 30.6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
95 to 105 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
240 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
High Voltage Application
more info
1200 V Silicon Carbide MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 to 132 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
16 to 26 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
484 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial, Commercial
Applications:
Solar Inverters, Switch mode power supplies, UPS, ...
more info
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
130 to 330 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23(TO-236)
Industry:
Commercial, Industrial
Applications:
Switching
more info

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