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TM600FF12S3-W3A01

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The TM600FF12S3-W3A01 from Dynex Semiconductor is a MOSFET with Continous Drain Current 600 A, Drain Source Resistance 2.2 to 3.8 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -8 to 19 V, Gate Source Threshold Voltage 1.6 to 3.6 V. More details for TM600FF12S3-W3A01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TM600FF12S3-W3A01
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V, 600 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Technology
    SiC View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channels
    Hex View all
  • Continous Drain Current
    600 A
  • Drain Source Resistance
    2.2 to 3.8 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -8 to 19 V
  • Gate Source Threshold Voltage
    1.6 to 3.6 V
  • Gate Charge
    1580 nC
  • Power Dissipation
    1020 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Applications
    Hybrid Electrical Vehicles, Motor Drives

Technical Documents
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