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IPB013N10NM8

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IPB013N10NM8 Image

The IPB013N10NM8 from Infineon Technologies is a MOSFET with Continous Drain Current 37 to 179 A, Drain Source Resistance 1.18 to 1.44 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 2.4 to 3.2 V. Tags: Surface Mount. More details for IPB013N10NM8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB013N10NM8
  • Manufacturer
    Infineon Technologies
  • Description
    100 V, 37 to 179 A, 3.8 to 500 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channels
    Single View all
  • Continous Drain Current
    37 to 179 A
  • Drain Source Resistance
    1.18 to 1.44 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    2.4 to 3.2 V
  • Gate Charge
    255 to 319 nC
  • Power Dissipation
    3.8 to 500 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    PG-TO263-3

Technical Documents
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