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GCMX1P4B120S4B1-N

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GCMX1P4B120S4B1-N Image

The GCMX1P4B120S4B1-N from SemiQ is a MOSFET with Continous Drain Current 869 to 1010 A, Drain Source Resistance 1.4 to 2.3 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -4.5 to 18 V, Gate Source Threshold Voltage 1.8 to 4 V. Tags: Module. More details for GCMX1P4B120S4B1-N can be seen below.

Product Specifications

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Product Details

  • Part Number
    GCMX1P4B120S4B1-N
  • Manufacturer
    SemiQ
  • Description
    1200 V, 869 to 1010 A, 2618 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode View all
  • Technology
    SiC View all
  • Transistor Polarity
    N-Channel View all
  • Dimensions
    62 x 152 mm
  • Number of Channels
    Dual View all
  • Continous Drain Current
    869 to 1010 A
  • Drain Source Resistance
    1.4 to 2.3 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -4.5 to 18 V
  • Gate Source Threshold Voltage
    1.8 to 4 V
  • Gate Charge
    2608 nC
  • Power Dissipation
    2618 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes View all
  • Package Type
    Module View all
  • Package
    S4
  • Applications
    Motor drives, EV applications, Smart-grid, Uninterruptible power supply (UPS)

Technical Documents
View details on the manufacturer's website
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