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GaN Power Transistors from Manufacturers in United States - Page 3

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 3 of 15
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Tagore Technology - TP44100SGTRPBF

GaN Power Transistor from Tagore Technology
650 V, 90 to 220 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 to 220 milli-ohm
Continous Drain Current:
12 to 19 A
Pulsed Drain Current:
30 A
Total Charge:
3 nC
Input Capacitance:
110 pF
Output Capacitance:
35 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
5.7 x 0.8 mm
more info
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EPC Space - CDA10N30X1S

GaN Power Transistor from EPC Space
100 V, 30 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.5 to 9 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
11 nC
Input Capacitance:
1000 pF
Output Capacitance:
700 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
4.8 x 2.2 mm
more info
NV6515 Image
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Navitas Semiconductor - NV6515

GaN Power Transistor from Navitas Semiconductor
Automotive-Grade GaN Power Stage IC

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
25 to 60 milli-ohm
Continous Drain Current:
41 to 65 A
Pulsed Drain Current:
57 to 125 A
Output Capacitance:
108 pF
Turn-on Delay Time:
25 to 36 ns
Turn-off Delay Time:
8 to 17 ns
Rise Time:
8 ns
Fall Time:
9 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLL-4L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
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Teledyne e2v HiRel Electronics - TDG650E602TSPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 11 to 60 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Battery management, Traction Drive, dc-dc Converte...
Dimensions:
9 x 7.6 x 0.54 mm
more info
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Solid State Devices - SGF15D100JDB

GaN Power Transistor from Solid State Devices
1000 V, 140 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
-27 to -8 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
140 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
30 nC
Input Capacitance:
135 pF
Output Capacitance:
44 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC29215_55 Image
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Efficient Power Conversion - EPC29215_55

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
200 V
Drain Source Resistance:
8 milli-ohm
Continous Drain Current:
32 A
Pulsed Drain Current:
162 A
Total Charge:
17.7 nC
Input Capacitance:
1790 pF
Output Capacitance:
585 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC Converters, BLDC Motor Drives, Sync Rectific...
Dimensions:
4.6 x 1.6 mm
more info
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Tagore Technology - TP44200SGTRPBF

GaN Power Transistor from Tagore Technology
650 V, 180 to 440 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Total Charge:
1.5 nC
Input Capacitance:
55 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
12 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
5.7 x 0.8 mm
more info
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EPC Space - EPC7002CDASH

GaN Power Transistor from EPC Space
40 V, 10 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
9 to 15 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
62 A
Total Charge:
3 nC
Input Capacitance:
312 pF
Output Capacitance:
270 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.7 mm
more info
NV6525 Image
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Navitas Semiconductor - NV6525

GaN Power Transistor from Navitas Semiconductor
Automotive-Grade GaN Power IC

Product Specs

Configuration:
Single
Industry:
Industrial, Commercial
Drain Source Voltage:
-7 to 650 V
Drain Source Resistance:
25 to 60 milli-ohm
Continous Drain Current:
41 to 65 A
Pulsed Drain Current:
57 to 125 A
Output Capacitance:
108 pF
Turn-on Delay Time:
25 to 36 ns
Turn-off Delay Time:
8 to 17 ns
Rise Time:
8 ns
Fall Time:
9 ns
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q100
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLT-16L
Applications:
AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for syn...
more info
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Teledyne e2v HiRel Electronics - TDG650E15BEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 100 to 258 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
5 x 6.6 x 0.51 mm
more info
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Central Semiconductor - CDF56G6511N

GaN Power Transistor from Central Semiconductor
650 V, 11.5 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 190 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5X6A
Applications:
High voltage, Soft switching applications
more info
SGF15D100J Image
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Solid State Devices - SGF15D100J

GaN Power Transistor from Solid State Devices
1000 V Depletion Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
-12 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
140 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
30 nC
Input Capacitance:
135 pF
Output Capacitance:
44 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
Dimensions:
1.760 x 0.420 inches
more info
EPC2934C Image
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Efficient Power Conversion - EPC2934C

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement Mode Power Transistor for Class-D Audio Applications

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
6 to 8 milli-ohm
Continous Drain Current:
39 A
Pulsed Drain Current:
213 A
Total Charge:
13.8 nC
Input Capacitance:
1386 pF
Output Capacitance:
962 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High Speed DC-DC Conversion, Motor Drive, Industri...
Dimensions:
4.6 x 2.6 mm
more info
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Tagore Technology - TP44400SGTRPBF

GaN Power Transistor from Tagore Technology
650 V, 360 to 880 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, PFC and inverter a...
Dimensions:
5.7 x 0.8 mm
more info
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EPC Space - CDA20N18X3S

GaN Power Transistor from EPC Space
200 V, 18 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
18 to 25 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
6 nC
Input Capacitance:
900 pF
Output Capacitance:
359 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
4.2 x 2.2 mm
more info
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