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GaN Power Transistors from Manufacturers in United States - Page 6

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 6 of 15
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EPC Space - JANSH2N7682UFAC

GaN Power Transistor from EPC Space
40 V, 9 to 15 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
40 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
9 to 15 A
Total Charge:
8 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
more info
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Navitas Semiconductor - NV6125

GaN Power Transistor from Navitas Semiconductor
800 V, 8 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
175 to 362 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
12 to 16 A
Total Charge:
16 nC
Output Capacitance:
18 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
TDG650E60TEPF Image
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Teledyne e2v HiRel Electronics - TDG650E60TEPF

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V Enhancement Mode GaN-on-Si Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
9 x 7.6 x 0.54 mm
more info
EPC2067 Image
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Efficient Power Conversion - EPC2067

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.3 milli-ohm
Continous Drain Current:
69 A
Pulsed Drain Current:
409 A
Total Charge:
17.1 nC
Input Capacitance:
2178 pF
Output Capacitance:
1071 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High frequency DC-DC Converters, BLDC Motor Drives...
Dimensions:
2.85 x 3.25 mm
more info
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EPC Space - JANSH2N7681UFGC

GaN Power Transistor from EPC Space
200 V, 34 to 55 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
200 V
Drain Source Resistance:
14 milli-ohm
Continous Drain Current:
34 to 55 A
Total Charge:
14 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
NV6113 Image
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Navitas Semiconductor - NV6113

GaN Power Transistor from Navitas Semiconductor
800 V GaN Power IC for Lighting & Telecom Applications

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
420 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
10 A
Total Charge:
10 nC
Output Capacitance:
11 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
8 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
5 x 6 mm
more info
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Teledyne e2v HiRel Electronics - TDG100E90BEP

GaN Power Transistor from Teledyne e2v HiRel Electronics
100 V, 6 to 20 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
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Solid State Devices - SGF48N10

GaN Power Transistor from Solid State Devices
100 V, 5.5 to 6 milli-ohm, 48 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.5 to 6 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMG
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC7002 Image
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Efficient Power Conversion - EPC7002

GaN Power Transistor from Efficient Power Conversion
40 V Radiation-Hard GaN Power Transistor

Product Specs

Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
8.5 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
62 A
Package Type:
Die
Applications:
For Space Applications such as DC-DC power, Motor ...
Dimensions:
1.7 x 1.1 mm
more info
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EPC Space - JANSH2N7669UFBC

GaN Power Transistor from EPC Space
200 V, 11 to 18 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
200 V
Drain Source Resistance:
30 milli-ohm
Continous Drain Current:
11 to 18 A
Total Charge:
7 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
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Navitas Semiconductor - NV6123

GaN Power Transistor from Navitas Semiconductor
800 V, 5 A, Single GaN Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
300 to 621 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
7.5 to 10 A
Total Charge:
10 nC
Output Capacitance:
11 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
8 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
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Teledyne e2v HiRel Electronics - TDG650E602TSP

GaN Power Transistor from Teledyne e2v HiRel Electronics
650 V, 11 to 60 milli-ohm GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Battery management, Traction Drive, dc-dc Converte...
Dimensions:
9 x 7.6 x 0.54 mm
more info
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Solid State Devices - SGF15E100JDB

GaN Power Transistor from Solid State Devices
1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

Product Specs

Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-257
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
EPC7001 Image
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Efficient Power Conversion - EPC7001

GaN Power Transistor from Efficient Power Conversion
Radiation Hard GaN Power Transistor for Satellite Applications

Product Specs

Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
2.1 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
250 A
Package Type:
Die
Applications:
Radiation hard motor drives, Deep space probes, Hi...
Dimensions:
4.1 x 1.6 mm
more info
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EPC Space - JANSH2N7683UFAC

GaN Power Transistor from EPC Space
100 V, 6 to 10 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
6 to 10 A
Total Charge:
2.2 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
more info
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