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MOSFETs from Manufacturers in China - Page 25

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 25 of 77
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Yangjie Electronic Technology - YJJ06P03A

MOSFET from Yangjie Electronic Technology
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
36 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Industrial, Commercial
Applications:
Battery management, Load switch, Power management
more info
G1003B Image
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Goford Semiconductor - G1003B

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
135 to 180 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
3.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management
more info
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Hunan Jingxin Microelectronics - ES4485

MOSFET from Hunan Jingxin Microelectronics
-40 V, 8.8 to 11 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
8.8 to 11 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
13 to 20 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ120R025K9T2F

MOSFET from Oriental Semiconductor
1200 V, 50 to 64 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 to 64 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
25 to 48 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
340 W
Temperature operating range:
-55 to 175 Degree C
Package:
X2PAK
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - T2N7172DW

MOSFET from Galaxy Century Microelectronics
±20 V, -0.2 to 0.3 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.2 to 0.3 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
1400 to 5000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJL03N06B

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
86 to 200 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Battery management, Load switch, Power management
more info
GT10N10 Image
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Goford Semiconductor - GT10N10

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
115 to 175 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
17 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Consumer electronic power supply, Isolated DC/DC c...
more info
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Hunan Jingxin Microelectronics - ES3134KX

MOSFET from Hunan Jingxin Microelectronics
20 V, 0.5 to 0.7 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 to 0.7 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
220 to 700 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ120R070H4T3F_NB

MOSFET from Oriental Semiconductor
1200 V, 18 to 26 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 26 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
70 to 140 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - BL1013DW

MOSFET from Galaxy Century Microelectronics
±12 V, -0.78 to -0.62 A Dual P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.78 to -0.62 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
400 to 2200 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
0.54 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJQ50N03B

MOSFET from Yangjie Electronic Technology
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.9 to 8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Industrial, Commercial
Applications:
High current load applications, Load switching, Ha...
more info
G20P08K Image
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Goford Semiconductor - G20P08K

MOSFET from Goford Semiconductor
-80 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-80 V
Drain Source Resistance:
52 to 70 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ES35N06B

MOSFET from Hunan Jingxin Microelectronics
60 V, 12 to 15 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 15 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
38 to 63 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG60R055TT4ZF

MOSFET from Oriental Semiconductor
600 V, 31 to 50 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 to 50 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
45.8 to 115.7 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
350 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - F605

MOSFET from Galaxy Century Microelectronics
±20 V, 0.03 A Single N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.03 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
350 to 800 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Line current interrupter in telephone sets, Relay,...
more info
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