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MOSFETs from Manufacturers in China - Page 26

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 26 of 77
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Yangjie Electronic Technology - YJQ13N03A

MOSFET from Yangjie Electronic Technology
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN2x2-6L
Industry:
Industrial, Commercial
Applications:
High current load applications, Load switching, Ha...
more info
GT1003A Image
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Goford Semiconductor - GT1003A

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
110 to 140 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
Consumer electronic power supply, Isolated DC/DC c...
more info
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Hunan Jingxin Microelectronics - ES4407

MOSFET from Hunan Jingxin Microelectronics
-30 V, -10 to -12 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to -12 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
9.5 to 17 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG60R055TT3ZF

MOSFET from Oriental Semiconductor
600 V, 28 to 44 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 to 44 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
49 to 121 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - BSS123

MOSFET from Galaxy Century Microelectronics
±20 V, 0.17 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.17 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3500 to 10000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJG85G06AK

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.9 to 5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions, Sync...
more info
GT105N10K Image
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Goford Semiconductor - GT105N10K

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8.5 to 10.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ES4576

MOSFET from Hunan Jingxin Microelectronics
30 V, 13 to 17 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 to 17 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5 to 9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG65R380FF_NB

MOSFET from Oriental Semiconductor
650 V, 7 to 11 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 11 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
350 to 890 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F_NL
Industry:
Industrial, Commercial
Applications:
PC power, LED lighting, Telecom power, Server powe...
more info
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Galaxy Century Microelectronics - TBSS138ES

MOSFET from Galaxy Century Microelectronics
±20 V, 0.36 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.36 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1000 to 4500 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
Applications:
DC-DC converters, ower management functions, Batte...
more info
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Yangjie Electronic Technology - YJL3401A

MOSFET from Yangjie Electronic Technology
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
40 to 94 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Battery management, Load switch, Power management
more info
8N60A Image
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Goford Semiconductor - 8N60A

MOSFET from Goford Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.32 to 8.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
940 to 1100 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
High frequency switching mode power supply, Uninte...
more info
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Hunan Jingxin Microelectronics - ES3402A

MOSFET from Hunan Jingxin Microelectronics
30 V, 3.0 to 3.9 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.0 to 3.9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
40 to 69 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG60R045TT4ZF

MOSFET from Oriental Semiconductor
600 V, 33 to 52 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 52 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
39 to 93 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
330 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - RK7002A

MOSFET from Galaxy Century Microelectronics
±20 V, ±0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
±0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2400 to 7500 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-65 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor SOT-2...
more info
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