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MOSFETs from Manufacturers in China - Page 23

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 23 of 77
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Yangjie Electronic Technology - YJL2312A

MOSFET from Yangjie Electronic Technology
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
13.5 to 39 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
PWM application, Load switch
more info
GT1003D Image
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Goford Semiconductor - GT1003D

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
105 to 150 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters, Synchronous Rectif...
more info
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Hunan Jingxin Microelectronics - ES3404

MOSFET from Hunan Jingxin Microelectronics
30 V, 4.7 to 6.2 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.7 to 6.2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
17 to 38 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG65R190FTF

MOSFET from Oriental Semiconductor
650 V, 11.4 to 18 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.4 to 18 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
160 to 437 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
32 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - BSS138BK

MOSFET from Galaxy Century Microelectronics
±20 V, 0.5 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
560 to 3000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.37 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
more info
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Yangjie Electronic Technology - YJJ3724A

MOSFET from Yangjie Electronic Technology
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3.6 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
26 to 109 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Industrial, Commercial
Applications:
Wireless charger, Load switch, Power management
more info
10N60F Image
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Goford Semiconductor - 10N60F

MOSFET from Goford Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 10 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
620 to 750 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ES3404A

MOSFET from Hunan Jingxin Microelectronics
30 V, 4.7 to 6.2 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.7 to 6.2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
17 to 38 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSG65R099FT3ZF-F

MOSFET from Oriental Semiconductor
650 V, 25.3 to 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25.3 to 40 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
81 to 208 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - 2N5003M

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1200 to 3200 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-723
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJP45G10B

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 to 17 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switching application, Hard switched and hig...
more info
G5N20J Image
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Goford Semiconductor - G5N20J

MOSFET from Goford Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
440 to 580 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Automotive, Industrial, Commercial
Applications:
DC Motor Control and Class D Amplifier, Uninterrup...
more info
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Hunan Jingxin Microelectronics - ES4435A

MOSFET from Hunan Jingxin Microelectronics
-30 V, -7.9 to -10.0 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7.9 to -10.0 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
17.5 to 30 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ65R020K7T2F

MOSFET from Oriental Semiconductor
650 V, 57 to 81 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
57 to 81 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
20 to 34 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - BSS8402DW

MOSFET from Galaxy Century Microelectronics
±20 V, -0.13 to 0.115 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.13 to 0.115 A
Drain Source Breakdown Voltage:
-50 to 60 V
Drain Source Resistance:
1000 to 10000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
more info
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