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MOSFETs from Manufacturers in China - Page 24

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 24 of 77
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Yangjie Electronic Technology - YJQ47N02A

MOSFET from Yangjie Electronic Technology
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
47 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
4.5 to 14 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
21 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions
more info
GT095N10D5 Image
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Goford Semiconductor - GT095N10D5

MOSFET from Goford Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS or LED Driver, U...
more info
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Hunan Jingxin Microelectronics - ES3134KZ

MOSFET from Hunan Jingxin Microelectronics
20 V, 0.68 to 0.88 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.68 to 0.88 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
220 to 700 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ65R060H4T3F_NB

MOSFET from Oriental Semiconductor
650 V, 25 to 35 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 to 35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
60 to 103 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - 2N7002HL

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN1006-3
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJP70G10B

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
7.2 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switching application, Hard switched and hig...
more info
4N60A Image
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Goford Semiconductor - 4N60A

MOSFET from Goford Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.78 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1950 to 2300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
44.6 to 100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220, TO-220F, TO-251, TO-252
Industry:
Industrial, Commercial
Applications:
High frequency switching mode power supply, Uninte...
more info
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Hunan Jingxin Microelectronics - ES3134KQ

MOSFET from Hunan Jingxin Microelectronics
20 V, 0.68 to 0.88 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.68 to 0.88 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
220 to 700 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ120R060H4T2F_NB

MOSFET from Oriental Semiconductor
1200 V, 23 to 33 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 to 33 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 to 117 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
154 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - BL1N50C-3L

MOSFET from Galaxy Century Microelectronics
±20 V, 1 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
8700 to 10000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Military, Industrial, Commercial
Applications:
Power switching application, Hard switching and hi...
more info
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Yangjie Electronic Technology - YJL03G10A

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
110 to 300 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions
more info
4N60F Image
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Goford Semiconductor - 4N60F

MOSFET from Goford Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
2000 to 2500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
33 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ES4405

MOSFET from Hunan Jingxin Microelectronics
-30 V, -5.0 to -6.5 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.0 to -6.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
39 to 78 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ65R052K7T3F

MOSFET from Oriental Semiconductor
650 V, 31 to 39 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 to 39 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
52 to 90 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - 2N7002SH

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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