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MOSFETs from Manufacturers in China - Page 22

1,145 MOSFETs from 9 manufacturers meet your specification.
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1,145 MOSFETs from 9 Manufacturers
1,145 Products from 9 Manufacturers
Page 22 of 77
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Yangjie Electronic Technology - YJJ08N02A

MOSFET from Yangjie Electronic Technology
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
14 to 39 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Industrial, Commercial
Applications:
Battery management, Load switch, Power management
more info
G04P10HE Image
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Goford Semiconductor - G04P10HE

MOSFET from Goford Semiconductor
-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
177 to 250 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ES4421

MOSFET from Hunan Jingxin Microelectronics
-60 V, -5.6 to -7.2 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.6 to -7.2 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
28 to 39 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ65R048K9T2F

MOSFET from Oriental Semiconductor
650 V, 32 to 42 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 to 42 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
48 to 91 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
189 W
Temperature operating range:
-55 to 175 Degree C
Package:
X2PAK
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - TBSS5003-6L

MOSFET from Galaxy Century Microelectronics
±20 V, 0.31 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.31 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1100 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJP200G06A

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.35 to 3.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
260 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Consumer electronic power supply, Isolated DC-DC C...
more info
G2K8P15K Image
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Goford Semiconductor - G2K8P15K

MOSFET from Goford Semiconductor
-150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-12 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
271 to 310 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ES2343

MOSFET from Hunan Jingxin Microelectronics
-30 V, -3.2 to -4.1 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.2 to -4.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
39 to 80 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ120R040H4T2F_NB

MOSFET from Oriental Semiconductor
1200 V, 34 to 43 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 to 43 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 69 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - 2N7002H

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1000 to 4000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
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Yangjie Electronic Technology - YJJ03G10A

MOSFET from Yangjie Electronic Technology
110 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
110 V
Drain Source Resistance:
110 to 250 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions
more info
5N60 Image
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Goford Semiconductor - 5N60

MOSFET from Goford Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
2000 to 2500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ES3342

MOSFET from Hunan Jingxin Microelectronics
30 V, 31 to 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 to 40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.5 to 18 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3x3-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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Oriental Semiconductor - OSQ120R028H4T2F_NL

MOSFET from Oriental Semiconductor
1200 V, 56 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
28 to 51 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L-NL
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - BL3428W

MOSFET from Galaxy Century Microelectronics
±10 V, 0.4 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1200 to 4000 milli-ohm
Gate Source Voltage:
±10 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323
Industry:
Military, Industrial, Commercial
Applications:
Load switch appliances
more info
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