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MOSFETs from Manufacturers in Germany - Page 20

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 20 of 89
IRF7105PbF Image
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Infineon Technologies - IRF7105PbF

MOSFET from Infineon Technologies
-25 to 25 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.3 to 3.5 A
Drain Source Breakdown Voltage:
-25 to 25 V
Drain Source Resistance:
83 to 400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
IRF9389TRPb Image
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Infineon Technologies - IRF9389TRPb

MOSFET from Infineon Technologies
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.6 to 6.8 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
22 to 103 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
Applications:
High and Low side switches for Inverter, High and ...
more info
BSZ15DC02KD H Image
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Infineon Technologies - BSZ15DC02KD H

MOSFET from Infineon Technologies
-20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.2 to 5.1 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
41 to 310 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TSDSON-8-31
Industry:
Automotive
Applications:
Automotive, DC-DC, Motor control, Onboard charger
more info
IRF7503PbF Image
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Infineon Technologies - IRF7503PbF

MOSFET from Infineon Technologies
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
135 to 222 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
MICRO8
Industry:
Industrial, Commercial
more info
IRLHS6276TRPbF Image
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Infineon Technologies - IRLHS6276TRPbF

MOSFET from Infineon Technologies
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
9.6 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
33 to 62 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
6.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TSDSON-6
Industry:
Industrial, Commercial
Applications:
Charge and discharge switch for battery applicatio...
more info
IRF7313PbF Image
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Infineon Technologies - IRF7313PbF

MOSFET from Infineon Technologies
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
23 to 46 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
IRF7343PbF Image
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Infineon Technologies - IRF7343PbF

MOSFET from Infineon Technologies
-55 to 55 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.4 to 4.7 A
Drain Source Breakdown Voltage:
-55 to 55 V
Drain Source Resistance:
43 to 170 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
IRF7303PbF Image
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Infineon Technologies - IRF7303PbF

MOSFET from Infineon Technologies
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
5.3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
50 to 80 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
IRF7104PbF Image
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Infineon Technologies - IRF7104PbF

MOSFET from Infineon Technologies
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
190 to 400 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
IRF7907PbF Image
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Infineon Technologies - IRF7907PbF

MOSFET from Infineon Technologies
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7.3 to 85 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9.8 to 20.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.3 to 2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
Applications:
Dual SO-8 MOSFET for POL Converters in Notebook Co...
more info
BSL215C H6327 Image
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Infineon Technologies - BSL215C H6327

MOSFET from Infineon Technologies
-20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
108 to 280 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TSOP6-6
Industry:
Automotive
Applications:
Automotive, DC-DC, Motor control, Onboard charger
more info
BSC072N04LD Image
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Infineon Technologies - BSC072N04LD

MOSFET from Infineon Technologies
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
6.5 to 9.2 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Industry:
Industrial, Commercial
Applications:
SMPS, Inductive wireless charging, Load switches, ...
more info
BSC155N06ND Image
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Infineon Technologies - BSC155N06ND

MOSFET from Infineon Technologies
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12.9 to 15.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Industry:
Industrial, Commercial
Applications:
SMPS, Inductive wireless charging, Load switches, ...
more info
BSG0810NDI Image
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Infineon Technologies - BSG0810NDI

MOSFET from Infineon Technologies
25 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
19 to 50 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.7 to 4 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.5 to 6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TISON-8
Industry:
Industrial, Commercial
Applications:
Desktop and server, Single-phase & multiphase POL...
more info
BSC112N06LD Image
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Infineon Technologies - BSC112N06LD

MOSFET from Infineon Technologies
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9.5 to 15.8 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Industry:
Industrial, Commercial
Applications:
SMPS, Inductive wireless charging, Load switches, ...
more info
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