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MOSFETs from Manufacturers in Germany - Page 21

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 21 of 89
IRF7351PbF Image
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Infineon Technologies - IRF7351PbF

MOSFET from Infineon Technologies
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6.4 to 8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
13.7 to 17.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.28 to 2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
Applications:
Synchronous Rectifier MOSFET for Isolated DC-DC Co...
more info
IRL6297SDPbF Image
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Infineon Technologies - IRL6297SDPbF

MOSFET from Infineon Technologies
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
58 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
3.8 to 6.9 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
25 W
Temperature operating range:
-40 to 150 Degree C
Package:
MG-WDSON-6
Industry:
Industrial, Commercial
Applications:
Charge and Discharge Switch for Battery Applicatio...
more info
IRF7306PBF Image
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Infineon Technologies - IRF7306PBF

MOSFET from Infineon Technologies
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
100 to 160 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
IRF9952PbF Image
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Infineon Technologies - IRF9952PbF

MOSFET from Infineon Technologies
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.3 to 3.5 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
80 to 250 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
BSG0811ND Image
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Infineon Technologies - BSG0811ND

MOSFET from Infineon Technologies
25 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
19 to 50 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.7 to 4 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.5 to 6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TISON-8
Industry:
Industrial, Commercial
Applications:
Desktop and server, Single-phase & multiphase POL...
more info
BSZ215C H Image
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Infineon Technologies - BSZ215C H

MOSFET from Infineon Technologies
-20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.2 to 5.1 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
41 to 310 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TSDSON-8
Industry:
Automotive
Applications:
Automotive, DC-DC, Motor control, Onboard charger
more info
BSO615C G Image
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Infineon Technologies - BSO615C G

MOSFET from Infineon Technologies
-60 to 60 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 3.1 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
100 to 450 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-DSO-8
Industry:
Automotive
Applications:
Automotive, DC-DC, Motor control, Onboard charger
more info
IRF7530PbF Image
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Infineon Technologies - IRF7530PbF

MOSFET from Infineon Technologies
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
5.4 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
30 to 45 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
MICRO8
Industry:
Industrial, Commercial
more info
IRL6372PbF Image
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Infineon Technologies - IRL6372PbF

MOSFET from Infineon Technologies
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
8.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
14 to 23 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
Applications:
Battery operated DC moter inverter MOSFET, System ...
more info
IRF7319PbF Image
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Infineon Technologies - IRF7319PbF

MOSFET from Infineon Technologies
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.9 to 6.5 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
23 to 98 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
IRF7314PBF Image
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Infineon Technologies - IRF7314PBF

MOSFET from Infineon Technologies
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
49 to 98 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
IRF7509PbF Image
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Infineon Technologies - IRF7509PbF

MOSFET from Infineon Technologies
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 2.7 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
90 to 200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
MICRO8
Industry:
Industrial, Commercial
more info
IRF7328PbF Image
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Infineon Technologies - IRF7328PbF

MOSFET from Infineon Technologies
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
17 to 32 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
FF6MR12KM1P Image
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Infineon Technologies - FF6MR12KM1P

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
250 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.81 to 8.5 milliohm
Gate Source Voltage:
-10 to 20 V
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
F4-23MR12W1M1_B76 Image
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Infineon Technologies - F4-23MR12W1M1_B76

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial, Automotive
Applications:
Welding, DC charger for EV, DC/DC converter, High ...
more info
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