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MOSFETs from Manufacturers in Germany - Page 23

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 23 of 89
FF08MR12W1MA1_B11A Image
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Infineon Technologies - FF08MR12W1MA1_B11A

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
7.33 to 12.1 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Applications, Auxiliary Inverters, DC/D...
more info
FF23MR12W1M1P_B11 Image
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Infineon Technologies - FF23MR12W1M1P_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
DF11MR12W1M1_B11 Image
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Infineon Technologies - DF11MR12W1M1_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
Solar applications
more info
FF11MR12W1M1_B70 Image
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Infineon Technologies - FF11MR12W1M1_B70

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.3 to 16.5 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
FS03MR12A6MA1LB Image
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Infineon Technologies - FS03MR12A6MA1LB

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
400 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.75 to 4.55 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Applications, Hybrid Electrical Vehicle...
more info
F4-23MR12W1M1_B11 Image
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Infineon Technologies - F4-23MR12W1M1_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
FF3MR12KM1P Image
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Infineon Technologies - FF3MR12KM1P

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
375 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.83 to 4.33 milliohm
Gate Source Voltage:
-10 to 20 V
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
DF23MR12W1M1_B11 Image
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Infineon Technologies - DF23MR12W1M1_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
45 to 66 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
Solar applications
more info
DF11MR12W1M1P_B11 Image
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Infineon Technologies - DF11MR12W1M1P_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
Solar applications
more info
FS45MR12W1M1_B11 Image
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Infineon Technologies - FS45MR12W1M1_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
45 to 66 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
FF11MR12W1M1_B11 Image
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Infineon Technologies - FF11MR12W1M1_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.3 to 16.5 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
FF6MR12W2M1P_B11 Image
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Infineon Technologies - FF6MR12W2M1P_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.63 to 8.25 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
F4-15MR12W2M1_B76 Image
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Infineon Technologies - F4-15MR12W2M1_B76

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
15 to 22 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial, Automotive
Applications:
High Frequency Switching application, DC/DC conver...
more info
FF6MR12KM1 Image
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Infineon Technologies - FF6MR12KM1

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
250 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.81 to 8.5 milliohm
Gate Source Voltage:
-10 to 20 V
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
F4-23MR12W1M1P_B11 Image
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Infineon Technologies - F4-23MR12W1M1P_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
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