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MOSFETs from Manufacturers in Germany - Page 41

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 41 of 89
IRHNMC57110 Image
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Infineon Technologies - IRHNMC57110

MOSFET from Infineon Technologies
100 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.9 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
220 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2
Industry:
Space, Military
more info
IRHNJ57230SE Image
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Infineon Technologies - IRHNJ57230SE

MOSFET from Infineon Technologies
200 V, 35 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
220 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
IRHYB67230CM Image
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Infineon Technologies - IRHYB67230CM

MOSFET from Infineon Technologies
200 V, 42 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
130 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Space, Military
more info
IRHN7250 Image
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Infineon Technologies - IRHN7250

MOSFET from Infineon Technologies
200 V, 170 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
Industry:
Space, Military
more info
IRHF597110 Image
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Infineon Technologies - IRHF597110

MOSFET from Infineon Technologies
-100 V, 11 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.6 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
IRHY597130CM Image
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Infineon Technologies - IRHY597130CM

MOSFET from Infineon Technologies
-100 V, 40 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
215 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Space, Military
more info
IRHF57234SE Image
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Infineon Technologies - IRHF57234SE

MOSFET from Infineon Technologies
250 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.2 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
420 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
IRHNJ7130 Image
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Infineon Technologies - IRHNJ7130

MOSFET from Infineon Technologies
100 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.4 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
IRHLMS77064 Image
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Infineon Technologies - IRHLMS77064

MOSFET from Infineon Technologies
60 V, 162 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRHNJ9A7234 Image
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Infineon Technologies - IRHNJ9A7234

MOSFET from Infineon Technologies
250 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
IRHNS57264SE Image
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Infineon Technologies - IRHNS57264SE

MOSFET from Infineon Technologies
250 V, 165 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
Industry:
Space, Military
more info
IRHMB67260 Image
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Infineon Technologies - IRHMB67260

MOSFET from Infineon Technologies
200 V, 240 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless Low Ohmic
Industry:
Space, Military
more info
IRHNJ57234SE Image
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Infineon Technologies - IRHNJ57234SE

MOSFET from Infineon Technologies
250 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
IRHYS597034CM Image
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Infineon Technologies - IRHYS597034CM

MOSFET from Infineon Technologies
-60 V, 45 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
87 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
Industry:
Space, Military
more info
IRHNJ7230 Image
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Infineon Technologies - IRHNJ7230

MOSFET from Infineon Technologies
200 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.4 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
490 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
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