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MOSFETs from Manufacturers in Germany - Page 43

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 43 of 89
IRHNMC9A7120 Image
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Infineon Technologies - IRHNMC9A7120

MOSFET from Infineon Technologies
100 V, 23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2C
Industry:
Space, Military
more info
IRHNA57264SE Image
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Infineon Technologies - IRHNA57264SE

MOSFET from Infineon Technologies
250 V, 165 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
250 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
Applications:
DC-DC converter, Motor drives
more info
IRHM7054 Image
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Infineon Technologies - IRHM7054

MOSFET from Infineon Technologies
60 V, 200 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
300 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRHYS67234CM Image
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Infineon Technologies - IRHYS67234CM

MOSFET from Infineon Technologies
250 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
220 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Space, Military
more info
IRHNA9260 Image
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Infineon Technologies - IRHNA9260

MOSFET from Infineon Technologies
-200 V, 300 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-29 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
159 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
more info
IRHMB7260 Image
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Infineon Technologies - IRHMB7260

MOSFET from Infineon Technologies
200 V, 290 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRHYS67134CM Image
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Infineon Technologies - IRHYS67134CM

MOSFET from Infineon Technologies
150 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
90 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
Industry:
Space, Military
more info
IRHY9230CM Image
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Infineon Technologies - IRHY9230CM

MOSFET from Infineon Technologies
-200 V, 45 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
800 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Space, Military
Applications:
DC-DC converter, Motor drives, Solid state relays
more info
IRHYB67130CM Image
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Infineon Technologies - IRHYB67130CM

MOSFET from Infineon Technologies
100 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
42 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Space, Military
more info
IRHNM57110 Image
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Infineon Technologies - IRHNM57110

MOSFET from Infineon Technologies
100 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.9 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2
Industry:
Space, Military
more info
IRHMJ57160 Image
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Infineon Technologies - IRHMJ57160

MOSFET from Infineon Technologies
100 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
18 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless SMD
Industry:
Space, Military
more info
IRHM9230 Image
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Infineon Technologies - IRHM9230

MOSFET from Infineon Technologies
-200 V, 35 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
920 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRHN57250SE Image
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Infineon Technologies - IRHN57250SE

MOSFET from Infineon Technologies
200 V, 132 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
Industry:
Space, Military
more info
IRHMS57260SE Image
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Infineon Technologies - IRHMS57260SE

MOSFET from Infineon Technologies
200 V, 165 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
44 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRHLF77110 Image
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Infineon Technologies - IRHLF77110

MOSFET from Infineon Technologies
100 V, 13.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
320 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
21 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
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