1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Germany - Page 39

1,322 MOSFETs from 3 manufacturers meet your specification.
Filters (1)
Selected Filters:
1,322 MOSFETs from 3 Manufacturers
1,322 Products from 3 Manufacturers
Page 39 of 89
IRHNJ5S97130 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHNJ5S97130

MOSFET from Infineon Technologies
-100 V, 45 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
205 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
IRHNA9064 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHNA9064

MOSFET from Infineon Technologies
-60 V, 300 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-48 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
48 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
more info
IRHLYS77034CM Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHLYS77034CM

MOSFET from Infineon Technologies
60 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
45 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
Industry:
Space, Military
more info
IRHM7130 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHM7130

MOSFET from Infineon Technologies
100 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRH9230 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRH9230

MOSFET from Infineon Technologies
-200 V, 35 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
920 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-204AA
Industry:
Space, Military
more info
IRHM7230 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHM7230

MOSFET from Infineon Technologies
200 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
49 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRHF9130 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHF9130

MOSFET from Infineon Technologies
-100 V, 45 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
350 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
IRHM7360SE Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHM7360SE

MOSFET from Infineon Technologies
400 V, 185 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IRHF7130 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHF7130

MOSFET from Infineon Technologies
100 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
185 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
Industry:
Space, Military
more info
IRHNA7Z60 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHNA7Z60

MOSFET from Infineon Technologies
30 V, 421 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
Industry:
Space, Military
more info
IRHNS57064 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHNS57064

MOSFET from Infineon Technologies
60 V, 165 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
Industry:
Space, Military
more info
IRHM7064 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHM7064

MOSFET from Infineon Technologies
60 V, 270 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
Applications:
DC-DC converter, Motor drives
more info
IRHLUBC770Z4 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHLUBC770Z4

MOSFET from Infineon Technologies
60 V, 3.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
680 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
UBC
Industry:
Space, Military
more info
IRHMJ7250 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHMJ7250

MOSFET from Infineon Technologies
200 V, 170 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless SMD
Industry:
Space, Military
more info
IRHLYS797034CM Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHLYS797034CM

MOSFET from Infineon Technologies
-60 V, 36 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
74 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Space, Military
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.