1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 102

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 102 of 161
R6535ENZ4 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6535ENZ4

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-35 to 35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
98 to 200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
379 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK12Q60W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK12Q60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
265 to 340 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
100 W
Temperature operating range:
150 Degree C
Package:
IPAK
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
R6504KNX Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6504KNX

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
955 to 2020 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK12E80W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK12E80W

MOSFET from Toshiba
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
380 to 450 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
165 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
R6511ENX Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6511ENX

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
360 to 730 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
53 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK14N65W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK14N65W

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.7 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
220 to 250 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
R6020KNZ4 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6020KNZ4

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
170 to 196 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
231 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK12A50D Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK12A50D

MOSFET from Toshiba
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
450 to 520 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Switching Regulator Applications
more info
R6530ENX Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6530ENX

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
125 to 255 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
86 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK090A65Z Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK090A65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
75 to 90 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
R6515KNZ Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6515KNZ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
280 to 560 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
150 Degree C
Package:
TO-3PF
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK090N65Z Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK090N65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
75 to 90 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
R6530KNZ Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6530KNZ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
125 to 260 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
86 W
Temperature operating range:
150 Degree C
Package:
TO-3PF
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK16A60W5 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK16A60W5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
180 to 230 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
R6520KNX3 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6520KNX3

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
185 to 400 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
220 W
Temperature operating range:
150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Switching
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.