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MOSFETs from Manufacturers in Japan - Page 107

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 107 of 161
TK110N65Z Image
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Toshiba - TK110N65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
92 to 110 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
Switching Power Supplies
more info
R6030KNZ4 Image
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ROHM Semiconductor - R6030KNZ4

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
115 to 240 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
305 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK090U65Z Image
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Toshiba - TK090U65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
70 to 90 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TOLL
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
R6530KNX Image
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ROHM Semiconductor - R6530KNX

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
125 to 260 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
86 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPWR6003PL Image
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Toshiba - TPWR6003PL

MOSFET from Toshiba
30 V, 110 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
412 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.63 to 0.84 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
DSOP Advance
Industry:
Commercial, Industrial
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
R6047ENZ4 Image
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ROHM Semiconductor - R6047ENZ4

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-47 to 47 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
66 to 140 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
481 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPHR6503PL Image
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Toshiba - TPHR6503PL

MOSFET from Toshiba
30 V, 110 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
393 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.41 to 0.89 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
R6535KNZ4 Image
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ROHM Semiconductor - R6535KNZ4

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-35 to 35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
98 to 200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
379 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH3R003PL Image
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Toshiba - TPH3R003PL

MOSFET from Toshiba
30 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
134 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.2 to 4.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
90 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
R6515KNX Image
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ROHM Semiconductor - R6515KNX

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
280 to 560 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPN3300ANH Image
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Toshiba - TPN3300ANH

MOSFET from Toshiba
100 V, 11 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
28 to 33 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
27 W
Package:
TSON Advance
Industry:
Commercial, Industrial, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
R6515ENX Image
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ROHM Semiconductor - R6515ENX

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
280 to 560 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPW2R508NH Image
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Toshiba - TPW2R508NH

MOSFET from Toshiba
75 V, 72 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
170 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
2 to 2.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
142 W
Package:
DSOP Advance
Industry:
Commercial, Industrial
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
R6076ENZ4 Image
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ROHM Semiconductor - R6076ENZ4

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-76 to 76 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
38 to 85 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
735 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH6R30ANL Image
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Toshiba - TPH6R30ANL

MOSFET from Toshiba
100 V, 55 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
66 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
5.1 to 10.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
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