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MOSFETs from Manufacturers in Japan - Page 105

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 105 of 161
TK155A65Z Image
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Toshiba - TK155A65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
130 to 155 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
R6030ENZ Image
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ROHM Semiconductor - R6030ENZ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
155 to 255 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
120 W
Temperature operating range:
150 Degree C
Package:
TO-3PF
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK10A55D Image
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Toshiba - TK10A55D

MOSFET from Toshiba
550 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
560 to 720 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Switching Regulator Applications
more info
R6070JNZ4 Image
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ROHM Semiconductor - R6070JNZ4

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-70 to 70 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
45 to 58 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
770 W
Temperature operating range:
150 Degree C
Package:
TO-247G
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK16N60W5 Image
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Toshiba - TK16N60W5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
180 to 230 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
R6520ENX Image
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ROHM Semiconductor - R6520ENX

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
185 to 380 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
68 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK10A80W Image
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Toshiba - TK10A80W

MOSFET from Toshiba
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
460 to 550 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
R6076KNZ4 Image
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ROHM Semiconductor - R6076KNZ4

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-76 to 76 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
38 to 85 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
735 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK13A50DA Image
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Toshiba - TK13A50DA

MOSFET from Toshiba
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
390 to 470 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Switching Regulator Applications
more info
R6018JNX Image
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ROHM Semiconductor - R6018JNX

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-18 to 18 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
220 to 286 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
72 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK090E65Z Image
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Toshiba - TK090E65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
75 to 90 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
R6015ENZ Image
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ROHM Semiconductor - R6015ENZ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
260 to 560 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
120 W
Temperature operating range:
150 Degree C
Package:
TO-3PF
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK12A55D Image
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Toshiba - TK12A55D

MOSFET from Toshiba
550 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
480 to 570 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Switching Regulator Applications
more info
R6035ENZ4 Image
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ROHM Semiconductor - R6035ENZ4

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-35 to 35 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
92 to 200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
379 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK065N65Z Image
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Toshiba - TK065N65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
54 to 65 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
270 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
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