1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 121

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 121 of 161
TK3R3A06PL Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK3R3A06PL

MOSFET from Toshiba
60 V, 71 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
88 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.5 to 4.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
SH8K11 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SH8K11

MOSFET from ROHM Semiconductor
30 V, 1.9 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
70 to 140 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
TK3R3E08QM Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK3R3E08QM

MOSFET from Toshiba
80 V, 110 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.6 to 4.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
230 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
QS8K13 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - QS8K13

MOSFET from ROHM Semiconductor
30 V, 5.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
20 to 39 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Switching
more info
TK40J20D Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK40J20D

MOSFET from Toshiba
200 V, 100 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
37.4 to 44 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
260 W
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
EM6K31 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - EM6K31

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 12000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-563
Industry:
Industrial
Applications:
Switching
more info
TK3R2E06PL Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK3R2E06PL

MOSFET from Toshiba
60 V, 71 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.4 to 4.7 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
168 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RRF015P03 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RRF015P03

MOSFET from ROHM Semiconductor
-30 V, 3.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
115 to 270 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Industrial
Applications:
Switching
more info
TK3R9E10PL Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK3R9E10PL

MOSFET from Toshiba
100 V, 96 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
180 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.3 to 5.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
230 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
QH8K51 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - QH8K51

MOSFET from ROHM Semiconductor
100 V, 4.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
240 to 355 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Switching
more info
TK40E06N1 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK40E06N1

MOSFET from Toshiba
60 V, 23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
8.4 to 10.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
67 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
SH8K26 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SH8K26

MOSFET from ROHM Semiconductor
40 V, 2.9 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
27 to 50 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
TK40E10N1 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK40E10N1

MOSFET from Toshiba
100 V, 49 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
90 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.8 to 8.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
126 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RQ3C150BC Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ3C150BC

MOSFET from ROHM Semiconductor
-20 V, 60 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-37 to 37 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
4.8 to 14 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial
Applications:
Switching, Load switch
more info
TK72A08N1 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK72A08N1

MOSFET from Toshiba
80 V, 81 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
157 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
3.7 to 4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Voltage Regulators
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.