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MOSFETs from Manufacturers in Japan - Page 122

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 122 of 161
RAL025P01 Image
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ROHM Semiconductor - RAL025P01

MOSFET from ROHM Semiconductor
-12 V, 16 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
44 to 180 Milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Industrial
Applications:
Switching
more info
TK46A08N1 Image
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Toshiba - TK46A08N1

MOSFET from Toshiba
80 V, 37 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.9 to 8.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Voltage Regulators
more info
RQ1A070AP Image
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ROHM Semiconductor - RQ1A070AP

MOSFET from ROHM Semiconductor
-12 V, 80 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
10 to 31 Milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Road SW
more info
TK4R4P06PL Image
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Toshiba - TK4R4P06PL

MOSFET from Toshiba
60 V, 48.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
106 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.4 to 7.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
87 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RF4E075AT Image
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ROHM Semiconductor - RF4E075AT

MOSFET from ROHM Semiconductor
-30 V, 22 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7.5 to 7.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
16.7 to 31.7 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
DFN2020-8S
Industry:
Industrial
Applications:
Switching, Load switch
more info
TPH1500CNH Image
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Toshiba - TPH1500CNH

MOSFET from Toshiba
150 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
13 to 15.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RZM002P02 Image
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ROHM Semiconductor - RZM002P02

MOSFET from ROHM Semiconductor
-20 V, 1.4 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
800 to 9600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-723
Industry:
Industrial
Applications:
Switching
more info
TPH1R306P1 Image
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Toshiba - TPH1R306P1

MOSFET from Toshiba
60 V, 91 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
260 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
0.96 to 2.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RZM001P02 Image
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ROHM Semiconductor - RZM001P02

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 to 0.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
2500 to 40000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-723
Industry:
Industrial
Applications:
Switching
more info
TK72A12N1 Image
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Toshiba - TK72A12N1

MOSFET from Toshiba
120 V, 130 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
179 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
3.7 to 4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Voltage Regulators
more info
RU1C002ZP Image
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ROHM Semiconductor - RU1C002ZP

MOSFET from ROHM Semiconductor
-20 V, 1.4 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
800 to 9600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-323FL
Industry:
Industrial
Applications:
Switching
more info
TK4R1A10PL Image
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Toshiba - TK4R1A10PL

MOSFET from Toshiba
100 V, 104 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.5 to 5.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RAF040P01 Image
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ROHM Semiconductor - RAF040P01

MOSFET from ROHM Semiconductor
-12 V, 37 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
22 to 68 Milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Industrial
Applications:
Switching
more info
TPH2900ENH Image
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Toshiba - TPH2900ENH

MOSFET from Toshiba
200 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
24 to 29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
SH8KB6 Image
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ROHM Semiconductor - SH8KB6

MOSFET from ROHM Semiconductor
40 V, 10.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-8.5 to 8.5 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
14.9 to 26 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
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