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MOSFETs from Manufacturers in Japan - Page 117

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 117 of 161
TPN2R304PL Image
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Toshiba - TPN2R304PL

MOSFET from Toshiba
40 V, 41 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.8 to 4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Package:
TSON Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RZF020P01 Image
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ROHM Semiconductor - RZF020P01

MOSFET from ROHM Semiconductor
-12 V, 6.5 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
75 to 400 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Industrial
Applications:
Switching
more info
TPH6R003NL Image
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Toshiba - TPH6R003NL

MOSFET from Toshiba
30 V, 17 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
57 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.2 to 8.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
34 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Switching Voltage Regulators, DC-DC Converters
more info
EM6K7 Image
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ROHM Semiconductor - EM6K7

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
800 to 4800 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-563
Industry:
Industrial
Applications:
Switching
more info
TPN11006NL Image
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Toshiba - TPN11006NL

MOSFET from Toshiba
60 V, 23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9.6 to 17 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Package:
SOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
RF4C050AP Image
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ROHM Semiconductor - RF4C050AP

MOSFET from ROHM Semiconductor
-20 V, 55 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
18 to 65 Milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
DFN2020-8S
Industry:
Industrial
Applications:
Switching, Load switch
more info
2SK4207 Image
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Toshiba - 2SK4207

MOSFET from Toshiba
900 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
780 to 950 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
150 W
Package:
TO-3P
Industry:
Industrial, Military, Automotive
Applications:
Switching Regulator Applications
more info
RSJ151P10 Image
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ROHM Semiconductor - RSJ151P10

MOSFET from ROHM Semiconductor
-100 V, 64 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
85 to 140 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power supply, Automotive Moter drive, Au...
more info
TPN4R303NL Image
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Toshiba - TPN4R303NL

MOSFET from Toshiba
30 V, 14.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.6 to 6.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
34 W
Package:
TSON Advance
Industry:
Commercial, Industrial
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RS1E260AT Image
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ROHM Semiconductor - RS1E260AT

MOSFET from ROHM Semiconductor
-30 V, 175 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2.5 to 4.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial
Applications:
Switching
more info
TPH8R80ANH Image
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Toshiba - TPH8R80ANH

MOSFET from Toshiba
100 V, 33 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
59 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
7.4 to 8.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
61 W
Package:
SOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
RW4C045BC Image
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ROHM Semiconductor - RW4C045BC

MOSFET from ROHM Semiconductor
-20 V, 6.5 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
39 to 117 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
DFN1616-7T
Industry:
Industrial
Applications:
Switching, DC/DC converter, Battery switch
more info
TPN1110ENH Image
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Toshiba - TPN1110ENH

MOSFET from Toshiba
200 V, 7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
96 to 114 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39 W
Package:
TSON Advance
Industry:
Commercial, Industrial
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RV3CA01ZP Image
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ROHM Semiconductor - RV3CA01ZP

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 to 0.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
2500 to 13200 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.1 W
Temperature operating range:
150 Degree C
Package:
DFN0604-3
Industry:
Industrial
Applications:
Reverse voltage protection, Over voltage protectio...
more info
TPHR9003NL1 Image
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Toshiba - TPHR9003NL1

MOSFET from Toshiba
30 V, 74 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
320 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.77 to 1.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Industry:
Commercial, Industrial
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
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